Unlock instant, AI-driven research and patent intelligence for your innovation.

Failure analysis sample making method and failure analysis sample

A technology for failure analysis samples and manufacturing methods, which is applied in the field of semiconductor device testing, can solve the problems of increased difficulty in making failure analysis samples, reduce the risk of warping or fragmentation, and improve the success rate

Active Publication Date: 2021-11-23
YANGTZE MEMORY TECH CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the size of semiconductor devices gradually decreases, the difficulty of fabricating samples for failure analysis increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Failure analysis sample making method and failure analysis sample
  • Failure analysis sample making method and failure analysis sample
  • Failure analysis sample making method and failure analysis sample

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The technical solution of the present disclosure will be further elaborated below in conjunction with the drawings and embodiments. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0033] In the following paragraphs, the present disclosure is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the disclosure discloses a method for making a failure analysis sample. The method includes: providing a die to be tested; wherein, the die to be tested includes a front side and a back side oppositely arranged, and the front side of the die to be tested is bonded to the first substrate through a first glue layer; The back side of the tube core to be tested is fixedly connected to the second substrate through the second adhesive layer; wherein, the curing temperature of the second adhesive layer is lower than the melting temperature of the first adhesive layer, and the melting temperature of the second adhesive layer The temperature is greater than the melting temperature of the first adhesive layer; after the second substrate is bonded to the back of the die to be tested, the first substrate and the die to be tested are separated.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor device testing, and in particular to a method for making a failure analysis sample and the failure analysis sample. Background technique [0002] In the research and development and production process of semiconductor devices, failure analysis is an indispensable and important means to improve process conditions and product yield. Through failure analysis, it can help R&D and production personnel to find problems such as design defects, mismatch of process parameters or improper operation in production. Provide necessary feedback information for subsequent product design, and provide necessary supplements for adjustment of production process. [0003] In the failure analysis process, the most basic step is the preparation of failure analysis samples. The quality of failure analysis samples directly affects whether the failure location of semiconductor devices can be accurately...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCG01R31/2898
Inventor 王娟杜晓琼
Owner YANGTZE MEMORY TECH CO LTD