A bi(fe,zn)o for high-speed photodetection 3 /nio all oxide thin film heterojunction

Abstract

The invention provides an all-oxide thin film heterojunction based on zinc-doped bismuth ferrite / nickel oxide material, which belongs to the technical field of semiconductor devices. The invention discloses a method for accurately preparing a zinc-doped bismuth ferrite / nickel oxide thin film heterojunction. The film has good crystallinity and uniform and dense morphology, strong controllability, simple process and high preparation efficiency. The invention realizes good matching and coupling of zinc-doped bismuth ferrite and nickel oxide to form a heterojunction structure, and utilizes the combination of the bismuth ferrite polarized electric field and the built-in electric field of the heterojunction to promote the transport of photogenerated carriers and obtain visible light The high-speed photoelectric response characteristics within the range can be used to fabricate related semiconductor photodetection devices, which is of great significance for the practical application of oxide perovskite thin films in the field of semiconductor devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and relates to a Zn-BiFeO3 / NiO thin film heterojunction based on full oxide. Background technique [0002] The outstanding advantages of ferroelectric materials in the fields of photoelectric conversion and photodetection are that the internal electric field generated by spontaneous polarization can improve the separation efficiency of photogenerated excitons and promote carrier transport, thereby improving the conversion efficiency and photoelectric response rate. BiFeO 3 (BFO) is one of the few room-temperature multiferroic materials that exhibits an R3c ferroelectric trigonal phase and a G-type antiferromagnetic structure at room temperature. The band gap (2.7 eV) of BFO is smaller than that of most perovskite oxides, and it is very suitable for the preparation of clean and stable functional semiconductor devices due to its multiferroic property at room temperatur...

AI Technical Summary

Problems solved by technology

[0003] In order to further improve the photodetection performance of BFO in the visible light range, two bottlenecks must be solved: ①BFO’s band gap is too large, which is not conducive to the absorption and conversion of visible light; ②BFO is easy to form oxygen vacancies and the variable valence state of iron ions ( From Fe 3+ to Fe 2+ ), leading to a higher recombination rate of photogenerated electrons-holes, thus restricting the response speed

It can be seen that the photoelectric response speed of the above devices still needs to be improved; the charge transport layer of nanomaterials or organic materials coupled with BFO will reduce the structural stability and is not conducive to subsequent device integration

[0006] In summary, there is no research on heterojunction photodetection devices constructed by combining Zn-doped BFO and inorganic oxide charge transport materials.

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