Chemical mechanical grinding method and chemical mechanical grinding equipment

Abstract

The invention discloses a chemical mechanical grinding method and chemical mechanical grinding equipment. The chemical mechanical grinding method comprises the steps that the grinding surfaces of n parts to be ground are divided into U grinding areas, wherein the number of the grinding areas is equal to that of grinding heads in the chemical mechanical grinding equipment, the grinding areas and the grinding heads are arranged in a one-to-one correspondence mode, the value of n comprises an integer larger than or equal to 1, and the value of U comprises an integer larger than or equal to 1; and according to the actual grinding thickness of each grinding area in the m parts to be ground, the chemical mechanical grinding equipment is used for conducting chemical mechanical grinding on the m parts to be ground, wherein the value of m is larger than or equal to 1 and smaller than or equal to n. According to the technical scheme provided by the embodiment of the invention, the accuracy of the chemical mechanical grinding method of at least one part to be ground is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a chemical mechanical polishing method and chemical mechanical polishing equipment. Background technique [0002] In the process of manufacturing semiconductor integrated circuits, chemical mechanical polishing (CMP) equipment is usually required to grind the workpiece to be ground so that the thickness and surface smoothness of the workpiece after grinding can meet preset requirements. Wherein, the workpiece to be polished is a film layer in a semiconductor integrated circuit. [0003] Due to the difference in the preparation process of the workpiece to be ground, the grinding thickness of the same area of ​​different workpieces to be ground will vary with the thickness and surface roughness of the workpiece to be ground. The grinding thickness of different regions of the same workpiece to be ground will be different according to the thickness a...

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Problems solved by technology

At present, in chemical mechanical polishing, it is difficult to carry out chemical mechanical grinding on the workpiece according to the actual grinding thickness of each grinding area of ​​each workpiece to be ground, resulting in low precision of the chemical mechanical grinding method, which in turn leads to the thickness of the workpiece to be ground after grinding and surface flatness can not meet the preset requirements

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