Semiconductor structure

Abstract

The semiconductor structure comprises a plurality of fin-shaped structures which extend along a first direction; a plurality of gate structure components extend along a second direction, the second direction is orthogonal to the first direction, and the gate structure components are separated by a plurality of dummy fin-shaped structures. The semiconductor structure also includes a conductive layer on the gate structure features and the dummy fin-shaped structure to electrically connect at least some of the gate structure features; and a cutting structure aligned with one of the dummy fin-shaped structures to electrically isolate the gate structure components on both sides of the one of the dummy fin-shaped structures.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor devices and fabrication methods thereof, and more particularly to fabrication methods of field effect transistors such as all-around gate field effect transistors or fin field effect transistors. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, functional density (the number of interconnected devices per unit chip area) generally increases as the geometric size (eg, the smallest component or circuit that can be produced by the manufacturing process used) shrinks. Size reduction is often beneficial for increased capacity and lower associated costs. Dimensional reduction tends to increase the complex...

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