Preparation method of WO3/Ag: ZnIn2S4 composite semiconductor photocatalyst

A compound semiconductor and photocatalyst technology, applied in the direction of catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc., to achieve the effects of controllable shape, common raw materials, and controllable process

Inactive Publication Date: 2021-07-20
SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the relatively high valence band energy and faster recombination process of photoinduced electrons still cannot meet our requirements

Method used

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  • Preparation method of WO3/Ag: ZnIn2S4 composite semiconductor photocatalyst

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Tungsten oxide was prepared by optimized solvothermal method. Firstly, the tungsten source (tungsten chloride) is oxidized with a structure regulator, and tungsten oxide with high quality is prepared by controlling the addition amount of the structure regulator, reaction temperature and other factors during the reaction process. Then, in the aqueous solution, the tungsten oxide is uniformly dispersed in the aqueous solution by ultrasonic action.

[0023] (2) First weigh 0.1g of tungsten oxide solid powder, dissolve it in 50mL of deionized water, ultrasonicate for 30min, and then weigh 7.78mg of Zn(OAc) in turn 2 2H 2 O, 20.6918mg of In(OAc) 3 and 0.0354mg of AgNO 3 Added to WO 3 solution, then add 5.7248 mg of L-cysteine ​​and sonicate for 30 min to be fully dissolved, transfer the solution to a 100 mL polytetrafluoroethylene liner, add 10.6496 mg of thioacetamide, stir for 30 min, and Reactor at 180 o C under the condition of hydrothermal reaction for 24h. ...

Embodiment 2

[0025] As described in Example 1, the difference is that Zn(OAc) will be added in step (2) 2 2H 2 The amount of O was adjusted to 12.96mg, In(OAc) 3 The amount adjusted to 34.4863mg, AgNO 3 The amount of L-cysteine ​​is adjusted to 0.0591mg, the amount of L-cysteine ​​is adjusted to 9.5413mg, and the amount of thioacetamide is adjusted to 17.7493mg, then the final catalyst contains WO 3 / 25wt%Ag:ZnIn 2 S 4 .

Embodiment 3

[0027] As described in Example 1, the difference is that Zn(OAc) will be added in step (2) 2 2H 2 The amount of O was adjusted to 18.15mg, In(OAc) 3 The amount adjusted to 48.2808mg, AgNO 3 The amount of L-cysteine ​​is adjusted to 0.0827mg, the amount of L-cysteine ​​is adjusted to 13.3578mg, and the amount of thioacetamide is adjusted to 24.8490mg, then the final catalyst contains WO 3 / 35wt%Ag:ZnIn 2 S 4 .

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Abstract

The invention discloses a preparation method of a WO3 / Ag: ZnIn2S4 composite semiconductor photocatalyst, and relates to a preparation method of a semiconductor photocatalyst, in particular to a preparation method of a metal ion doped defect type semiconductor for enhancing visible light photocatalytic activity. The Ag+, a zinc source, an indium source, a sulfur source and tungsten oxide react according to a certain molar ratio under a hydrothermal condition, and the target photocatalyst is obtained. The novel visible light photocatalyst is clear in structure and definite in composition, wherein the visible light spectrum response range of ZnIn2S4 can be remarkably enhanced by doping Ag+, so that the diffusion range of photo-generated carriers can be enlarged after the ZnIn2S4 is compounded with tungsten oxide, recombination of photo-generated electron-hole pairs is inhibited, and therefore the visible light catalytic activity is enhanced; in conclusion, the photocatalyst is a promising visible light photocatalytic material.

Description

technical field [0001] The present invention relates to a kind of preparation method of photocatalyst, relate to a kind of WO in particular 3 / Ag:ZnIn 2 S 4 Preparation method of compound semiconductor photocatalyst. Background technique [0002] Hydrogen energy, as an environmentally friendly, clean and pollution-free new energy source, can be prepared by photocatalytic water splitting. In order to achieve efficient water splitting and hydrogen production, a large number of semiconductor photocatalysts for hydrogen production have been developed. Including TiO 2 Traditional photocatalysts including other oxide semiconductors can only absorb ultraviolet light accounting for only 5% of the solar spectrum due to their large band gap (>3.0eV). Therefore, one of the most critical challenges in this field is to develop visible-light active photocatalysts. [0003] In recent years, ZnIn 2 S 4 As an important component of Ⅱ-Ⅲ-Ⅳ ternary chalcogenides, due to its unique op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J37/10C01B3/04
CPCB01J27/04B01J35/004B01J37/10C01B3/042Y02E60/36
Inventor 徐振和熊刚隋少婷黄薪邹雪芹吕明杨庞智辉柳妍竹
Owner SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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