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An imaging device with a large field of view

An imaging device and a large field of view technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of long design cycle and high cost, and achieve the effect of simple manufacturing process, low cost and compact structure

Active Publication Date: 2022-08-05
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These large-scale detector array sizes are the most direct way to increase the field of view of imaging devices, but this method has a long design cycle, high cost, and physical limitations

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  • An imaging device with a large field of view
  • An imaging device with a large field of view
  • An imaging device with a large field of view

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Embodiment Construction

[0030] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0031] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for t...

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Abstract

The invention discloses an imaging device with a large field of view, belonging to the technical field of photoelectric detection, comprising a surface microstructure, a substrate layer, a buffer layer, a pixel array and a passivation layer; the pixel array includes at least one pixel unit, and the pixel unit includes n + type doped layer, absorber layer, p + type doped layer; on the buffer layer of the substrate layer, there is an n-type penetrating passivation layer + type electrode, the p + The p-type doped layer is drawn through the passivation layer + The surface microstructure can change the transmission path of light, so that the incident optical signal is concentrated by the focusing effect of the surface microstructure, and the concentrated optical signal propagates to the pixel array to generate photo-generated electron-hole pairs that can move freely. Under bias, an electrical signal is formed. The large field of view imaging device of the present invention has the advantages of large imaging field of view and small pixel unit size, and the pixel unit can be applied to visible light imaging, infrared imaging and ultraviolet imaging according to different materials.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to an imaging device with a large field of view. Background technique [0002] Photodetector is an important optoelectronic device that converts incident radiation signal into electrical signal output. Imaging devices form observable images through photoelectric conversion of photodetectors, and are widely used in many fields of military and civilian use. [0003] Photoelectric imaging devices occupy a very important position in military and civilian use, and are widely used in the fields of reconnaissance, tracking, early warning and confrontation. Visible light imaging technology has been popularized in military (reconnaissance, early warning, tracking, etc.), high-speed image transmission and processing aerospace, multi-spectral hyperspectral remote sensing, medical and medical diagnosis and testing. The products of visible light imaging and infrared imaging dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/105H01L27/144H01L27/146
CPCH01L31/02327H01L31/105H01L27/1443H01L27/1446H01L27/14643
Inventor 李冲李占杰杨帅张琛辉李巍泽温哲
Owner BEIJING UNIV OF TECH