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Method for forming database for memory testing and memory testing method

A memory testing and database technology, applied in static memory, special data processing applications, instruments, etc., can solve problems such as inability to obtain data accurately, test equipment unable to correctly capture valid data, inaccurate memory testing, etc., to avoid Effects of inaccuracy

Active Publication Date: 2021-09-28
CHANGXIN MEMORY TECH INC
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Problems solved by technology

As the speed of the memory increases, the data window of the memory will be displaced, and the test equipment without automatic tracking function canno

Method used

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  • Method for forming database for memory testing and memory testing method
  • Method for forming database for memory testing and memory testing method
  • Method for forming database for memory testing and memory testing method

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Embodiment Construction

[0025] The method for forming a database for memory testing and the specific implementation of the memory testing method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] The purpose of the method for forming a database for memory testing in the present invention is to form a database, which includes the deviation value tDQSCK between the data strobe signal DQS and the clock signal CK and the corresponding relationship between the deviation value tDQSCK and memory parameters. The deviation tDQSCK between the data strobe signal DQS and the clock signal CK is the timing from the read delay elapse to the actual effective DQS / DQ output, which is a conventional parameter of semiconductors. The memory parameters refer to parameters affecting memory performance, which at least include voltage and temperature. Under different voltages and temperatures, the deviation value tDQSCK may be different.

[0027] figu...

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Abstract

The invention provides a method for forming a database for memory testing and a memory testing method. The method for forming the database comprises the following steps: under a memory parameter, taking a preset time value as a starting point, testing a memory for multiple times with a set time step length, and enabling the test result to be qualified or unqualified; taking test results which are continuously tested to be qualified under the memory parameters as a subgroup, wherein the test results can form at least one subgroup; taking the subgroup with the maximum number of test results as a calibration group, and obtaining a selected time value in the test time range of the calibration group; taking a difference value between the selected time value and the preset time value as a deviation value between a data strobe signal corresponding to the memory parameter and a clock signal; and changing the memory parameters, and repeating the steps to form the database, wherein the database comprises the deviation value between the data strobe signal and the clock signal and the corresponding relation between the deviation value and the memory parameters.

Description

technical field [0001] The invention relates to the field of memory testing, in particular to a method for forming a database for memory testing and a memory testing method. Background technique [0002] When performing a memory test, the memory can generate an effective data window (DataWindow) according to an external clock signal, and the memory testing equipment can acquire data for testing. [0003] Some test equipment can automatically track the data strobe signal (DQS) to acquire data for testing, while some test equipment does not have the function of automatic tracking. With the improvement of the operating speed of the memory, the data window of the memory will be displaced, and the test equipment without automatic tracking function cannot correctly capture the valid data of the moved data window, and thus cannot accurately obtain the data, resulting in memory testing. Inaccurate. [0004] Therefore, how to improve the accuracy of test equipment without automatic...

Claims

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Application Information

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IPC IPC(8): G11C29/56
CPCG11C29/56012G11C29/56008G11C29/028G11C2207/2254G06F16/11
Inventor 戴杨阳
Owner CHANGXIN MEMORY TECH INC
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