Spraying disc structure of MOCVD (metal-organic chemical vapor deposition) equipment

Abstract

A spraying disc structure of MOCVD (metal-organic chemical vapor deposition) equipment comprises a spraying disc body, a spraying disc sealing cover, a III-group gas inlet pipe and a V-group gas inlet pipe. Annular partition plates which are concentric and are distributed at equal intervals in the radial direction are fixedly arranged on the upper surface of the spraying disc body. The annular space between every two adjacent partition plates is used as a III-group or V-group gas inlet buffer storage cavity. The III-group gas inlet buffer storage cavities and the V-group gas inlet buffer storage cavities are alternately arranged in the radial direction. A plurality of III-group / V-group gas outlet hole channels are formed in the portions, corresponding to the III-group / V-group gas inlet buffer storage cavities, of the spraying disc body. The annular partition plates and the spraying disc sealing cover are sealed through sealing rings. A cooling pipeline is arranged on the upper surface of the spraying disc sealing cover. The III-group gas inlet pipe and the V-group gas inlet pipe have two gas inlet modes on the spraying disc body, namely a circumferential gas inlet mode and a central gas inlet mode. According to the spraying disc structure, the structural design of a spraying disc is further simplified, the structure is simpler and more compact, the gas inlet uniformity is ensured, the space occupancy rate of the spraying disc is reduced, and miniaturization of the MOCVD equipment is more facilitated.

Description

technical field [0001] The invention belongs to the technical field of vapor phase epitaxial growth, in particular to a shower plate structure of MOCVD equipment. Background technique [0002] Metal-organic chemical vapor deposition technology (Metal-organic Chemical Vapor Deposition, referred to as MOCVD) is one of the most common thin film growth technologies used in the semiconductor field. It has a wide range of applications and is suitable for growing various heterostructure materials. Thin epitaxial layer and obtain a very steep interface transition, easy to control growth, can grow high-purity materials, and can be mass-produced. [0003] The shower plate is one of the key components of MOCVD equipment, and its structural design directly affects the uniformity of film growth, and the uniformity control is directly related to the quality of material epitaxial growth. [0004] The Chinese patent with the application number 201210204724.9 discloses a shower head and its...

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Problems solved by technology

[0004] The Chinese patent with the application number 201210204724.9 discloses a shower head and its connection structure of a MOCVD equipment reactor. Group III gas layer and Group III gas layer, the three space layers are independent of each other and not connected to each other. If the spray plate structure wants to achieve the isolation effect of various gases, it is necessary to insert capillary tubes into the chassis of the spray plate. However, there are only a few companies in the world that have capillary array fusion welding processing capabilities. At the same time, because of the multi-layer structure to form a closed space that is not connected to each other, not only the structure is complicated, but also the thickness of the spray plate structure is relatively thick. High, so it will take up a lot of space in the reaction chamber of the MOCVD equipment, which is not conducive to the miniaturization of the MOCVD equipment

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