Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for extracting nonlinear behavior model of radio frequency microwave two-port device

An extraction method and two-port technology, which is applied in the field of nonlinear behavior model extraction of RF and microwave two-port devices, can solve the problem that S parameters cannot characterize the nonlinear characteristics of the fundamental wave response of RF and microwave devices

Active Publication Date: 2021-10-29
CHENGDU TECHCAL UNIV
View PDF13 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In order to solve the problem that S parameters cannot characterize the nonlinear characteristics of the fundamental response of radio frequency microwave devices in traditional methods, the present invention proposes a method for extracting nonlinear behavior models of radio frequency microwave two-port devices based on ordinary vector network analyzers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for extracting nonlinear behavior model of radio frequency microwave two-port device
  • Method for extracting nonlinear behavior model of radio frequency microwave two-port device
  • Method for extracting nonlinear behavior model of radio frequency microwave two-port device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The nonlinear behavior model is extracted for the GaAs monolithic integrated low-noise amplifier chip BW295 developed and produced by CLP Thirteen.

[0031] The first step is to perform vector calibration and power calibration on the vector network analyzer.

[0032] First perform on-chip vector calibration of the vector network analyzer between 2 GHz and 7 GHz; then perform power calibration to set the input power of the amplifier P in From -25 dBm to -1 dBm, step by 1 dBm, save calibration files under different power levels.

[0033] The second step is to test the power-related S-parameters.

[0034] Input power at -25 dBm P in Next, call the calibration file corresponding to the -25 dBm excitation to set the vector network analyzer, obtain the S parameters of the DUT, and store them as S parameters 110 under the minimum excitation power. Scan the excitation power, and call the calibration files under different powers to set the vector network analyzer, and measu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for extracting a nonlinear behavior model of a radio-frequency microwave two-port device, which comprises the following steps of: measuring the radio-frequency microwave two-port device under different excitation powers by using a conventional vector network analyzer, and then converting a specific value S parameter of a power-related reflected wave and an incident wave obtained by measurement; and selecting the forward transmission coefficient S21 under the minimum excitation power as a reference value, performing normalization processing on the amplitude and phase of the S21 under different excitation powers, and generating a behavior model capable of representing the nonlinear characteristic of the tested piece. The model extraction method provided by the invention directly converts an actual measurement result, and has compatibility for vector network analyzers of different models. When the method provided by the invention is used for extracting the nonlinear behavior model of the two-port tested piece, only a vector network analyzer and a small number of accessories need to be used, and special test equipment does not need to be additionally purchased, so that the modeling cost can be reduced.

Description

technical field [0001] The invention relates to radio frequency microwave device measurement technology, more specifically, the invention relates to a method for extracting a nonlinear behavior model of a radio frequency microwave two-port device. Background technique [0002] The so-called behavioral model refers to the model that does not need to obtain the internal details of the device or circuit, but only maps the input and output signals obtained from the test, also known as the black box model. There are some existing behavioral model extraction methods for RF microwave two-port devices. For example, the classic scattering matrix (S parameter) describes the frequency domain characteristics of the device. S-parameters can be used to predict the linear characteristics of the RF microwave two-port DUT, such as the amplitude and phase of reflection and transmission characteristics. [0003] S-parameters define the ratio of the reflected wave to the incident wave of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/00G06F30/20
CPCG01R31/00G06F30/20
Inventor 谢成诚周咏
Owner CHENGDU TECHCAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com