The invention discloses a modeling method of a
radio frequency MOS (
Metal Oxide Semiconductor) device, and relates to the technical field of MOS device modeling.
Electromagnetic simulation and thermal
field simulation are combined, a dynamic parasitic parameter
library is established, parasitic effects under complex working conditions are described, the dynamic parasitic parameter
library is taken as a core basis, the dynamic response capability of a model is remarkably improved, and the modeling efficiency of the
radio frequency MOS device is improved. Dynamic parasitic parameters are introduced into a small-
signal equivalent circuit model, dynamic changes of the parasitic parameters are explicitly embodied, a partition modeling method is introduced, dynamic behaviors of a grid
electrode, a source
electrode and a drain
electrode are refined into independent contributions, local dynamic characteristics of the
radio frequency MOS device can be described more accurately, modeling precision is enhanced, large-
signal excitation and nonlinear polynomial description are introduced, and the dynamic characteristics of the radio frequency MOS device can be described more accurately. The method comprises the steps of capturing nonlinear behaviors under a high-power condition, establishing a unified behavior model from
linearity to nonlinearity, accurately describing high-order nonlinearity by utilizing a
Volterra series method, and solving key problems of
signal frequency
aliasing and dynamic
distortion in nonlinear analysis in combination with dynamic parasitic parameters.