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Compensating circuit and compensating method for magnetic field sensing element

A magnetic field sensing and compensation circuit technology, applied in the field of magnetic field sensing, can solve the problems of low stress sensitivity, poor temperature consistency, mutual interference of currents, etc., to achieve the effect of improving stress sensitivity and improving temperature consistency

Active Publication Date: 2021-11-12
SUZHOU NOVOSENSE MICROELECTRONICS
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] One of the objectives of the present invention is to provide a compensation circuit for magnetic field sensing elements to solve the technical problems of low stress sensitivity, poor compensation effect, current mutual interference and poor temperature consistency in the prior art.

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  • Compensating circuit and compensating method for magnetic field sensing element
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  • Compensating circuit and compensating method for magnetic field sensing element

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Embodiment Construction

[0032] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.

[0033] It should be noted that the term "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also items not expressly listed other elements, or also include elements inherent in such a process, method, article, or apparatus. In addition, the terms "first", "second", "third", "fourth", etc. are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0034] The magnetic field sensing element is ...

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Abstract

The invention discloses a compensating circuit and a compensating method for a magnetic field sensing element. The compensating circuit comprises at least one magnetic field sensing element, at least one reference resistor, at least one current source and a processing module, each magnetic field sensing element comprises a sensing substrate, a sensing reaction layer, at least two sensing electrodes and at least two sensing doped regions; each reference resistor comprises a resistor substrate, a resistor reaction layer, at least two resistor electrodes and at least two resistor doped regions; the sensing reaction layer and the sensing doped region form the same doped structure as the resistance reaction layer and the resistance doped region, the average current of the magnetic field sensing element is configured to flow in a first plane, the resistance reaction layer has a first thickness and a first length, and at least part of the average current in the reference resistor flows along the first thickness direction; the first thickness direction is perpendicular to the first plane. According to the compensation circuit provided by the invention, the temperature consistency and the stress sensitivity degree of compensation are ensured, and the compensation accuracy is improved.

Description

technical field [0001] The invention relates to the technical field of magnetic field sensing, in particular to a compensation circuit and a compensation method for a magnetic field sensing element. Background technique [0002] Magnetic field sensing elements are widely used in daily life, industrial fields, and energy fields. By sensing the current magnetic field state, functions such as orientation judgment, contact opening and closing, and data measurement are realized. Hall semiconductor devices, which are mostly used for magnetic field sensing, may be affected by environmental physical parameters during operation, resulting in output errors outside the allowable range. The physical parameters typically include mechanical stress. Two implementations are provided in the prior art to solve the influence of mechanical stress on Hall semiconductor devices. One is to arrange two groups of Hall devices in the same plane of a single substrate, and use two groups of Hall device...

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Application Information

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IPC IPC(8): G01R33/02H01L43/06
CPCG01R33/02H10N52/101
Inventor 袁辅德
Owner SUZHOU NOVOSENSE MICROELECTRONICS
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