Transistor and method of making the same

Abstract

The invention discloses a transistor and a manufacturing method. The transistor includes: a substrate and a low-dimensional material layer disposed above the substrate; a plurality of sidewall spacers, the sidewall spacers being disposed on a side of the low-dimensional material layer away from the substrate, and a plurality of the sidewalls The walls are spaced apart; a source electrode and a drain electrode, the source electrode and the drain electrode are arranged on the side of the low-dimensional material layer away from the substrate; a gate structure, the gate structure is arranged on the low-dimensional material layer a side of the material layer away from the substrate, the gate structure is located between the source electrode and the drain electrode, and the gate structure, the source electrode and the drain electrode are all separated by the spacers open, and the gate structure, the source electrode and the drain electrode are all in contact with the spacer. Therefore, the transistor has the advantages of excellent comprehensive performance, high process compatibility, and good device uniformity.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a transistor and a manufacturing method. Background technique [0002] Carbon nanotubes are ideal transistor channel materials with excellent physical and chemical properties such as one-dimensional ultrathinness, high mobility, perfect lattice, high physical and chemical stability, and high thermal conductivity. Transistors using carbon nanotubes as channel materials have significant advantages over traditional transistors in extreme performance and energy utilization efficiency, and have low process costs and high process compatibility, making it easier to achieve three-dimensional integration. [0003] However, there is still room for improvement in transistors and fabrication methods using carbon nanotubes as channel materials. SUMMARY OF THE INVENTION [0004] The present invention is made based on the inventors' findings and understanding of the follo...

AI Technical Summary

Problems solved by technology

[0005] The inventors have found that current transistors using carbon nanotubes as channel materials still have problems such as poor practical performance, incompatibility between manufacturing process and scale manufacturing, and poor device uniformity.

Images