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Light emitting diode structure and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems affecting the luminous efficiency of micro-light-emitting diode chips, achieve the effects of improving luminous efficiency and brightness, and avoiding side wall effects

Pending Publication Date: 2021-12-10
PLAYNITRIDE DISPLAY CO LTD
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Problems solved by technology

However, for a micro-light-emitting diode (micro-LED) chip, since the area of ​​the light-emitting layer is very small, the ratio of the sidewall area of ​​the micro-light-emitting diode chip to the area of ​​the light-emitting layer will change. becomes larger, the sidewall effect will become significant at this time, which will greatly affect the luminous efficiency of the micro-LED chip

Method used

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  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof

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Embodiment Construction

[0022] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

[0023] Figure 1A to Figure 1D It is a schematic cross-sectional view illustrating the flow of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention. Please refer to Figure 1A to Figure 1D , The manufacturing method of the light emitting diode structure of this embodiment includes the following steps. First, please refer to Figure 1A , growing a semiconductor stack layer 200 on the first substrate 110 , wherein the semiconductor stack layer 200 includes a first-type semiconductor layer 210 , an active layer 220 and a second-type semiconductor layer 230 grown on the first substrate 110 in sequence. In this embodiment, the first-ty...

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Abstract

The invention provides a light-emitting diode structure and a manufacturing method thereof. The light-emitting diode structure comprises a semiconductor stack layer. The semiconductor stack layer includes a first type semiconductor layer, an active layer and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer, and the second type semiconductor layer is disposed on the active layer. The side wall of any side of the semiconductor stack layer comprises a rough surface.

Description

technical field [0001] The invention relates to a photoelectric element and its manufacturing method, in particular to a light emitting diode structure and its manufacturing method. Background technique [0002] In a general LED manufacturing process, the epitaxial layer is etched into a plurality of LED structures independent of each other by means of a photolithography process. However, the photolithography process (such as a dry etching process) will generate lattice defects (defects) on the sidewalls of the semiconductor stack layer of the light-emitting diode, causing electrons and holes to recombine at the aforementioned defects when the light-emitting diode is in use, resulting in The phenomenon of edge leakage is the so-called side wall effect. [0003] When the size of the light-emitting diode chip is large, the sidewall effect has little influence on the luminous efficiency, because the ratio of the sidewall area of ​​the light-emitting diode chip to the area of ​...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/005H01L33/007
Inventor 吴柏威罗玉云杨翔甯蔡昌峯
Owner PLAYNITRIDE DISPLAY CO LTD
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