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Light-emitting diode substrate, manufacturing method of light-emitting diode substrate and light-emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as heterogeneous structures that affect the quality of epitaxy, and achieve the effect of improving brightness and luminous efficiency

Active Publication Date: 2013-07-10
HANNSTAR DISPLAY NANJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some crystal faces are left on the surface of the protruding structure formed by wet etching, which is prone to produce heterostructures that affect the quality of epitaxy

Method used

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  • Light-emitting diode substrate, manufacturing method of light-emitting diode substrate and light-emitting diode
  • Light-emitting diode substrate, manufacturing method of light-emitting diode substrate and light-emitting diode
  • Light-emitting diode substrate, manufacturing method of light-emitting diode substrate and light-emitting diode

Examples

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Effect test

Embodiment 1

[0027] Example 1: Please refer to figure 1 One side 100a of the LED substrate 100 in this embodiment has a plurality of protruding structures 102 formed through the first processing procedure, and the surface of each protruding structure 102 is a defect surface 104 formed through the second processing procedure. The aforementioned LED substrate 100 may be a sapphire substrate, and the first processing procedure and the second processing procedure will be described in detail below.

[0028] Then, please refer to figure 2 , under the cross-section of each protruding structure 102 , the defective surface 104 of the light emitting diode substrate 100 has a surface height difference (surficial height difference) d1 within the range of the length L not less than 0.5 μm. The so-called "surface height difference" in this article refers to the vertical distance between the lowest point and the highest point within a certain range on the same plane. For example, the range of the surf...

Embodiment 2

[0033] Example 2: Please refer to Image 6 , the light emitting diode of this embodiment includes the light emitting diode substrate 100 of embodiment 1 (see figure 1 ), a first semiconductor layer 600 disposed on the light emitting diode substrate 100, a light emitting layer 602 disposed on the first semiconductor layer 600, a second semiconductor layer 604 disposed on the light emitting layer 602, contacting the first semiconductor layer A first ohmic electrode 606 of 600 and a second ohmic electrode 608 contacting the second semiconductor layer 604 . Since the surface of the protruding structure 102 on the light emitting diode substrate 100 is a defective surface (see figure 2 104), so it can prevent the generation of heterostructures that affect the quality of epitaxy. The protruding structure 102 of the light emitting diode substrate 100 can also be replaced by Figure 3-5 Any of the protruding structures shown in .

[0034] In this embodiment, the first semiconducto...

Embodiment 3

[0035] Example 3: Please refer to Figure 7 , first proceed to step 700, performing a first processing procedure on one side of a sapphire substrate to form a plurality of protrusion structures. The first processing procedure is, for example, wet etching or dry etching. For example, if wet etching is used to implement the first processing procedure, a mixed solution such as sulfuric acid and phosphoric acid may be used as the etching solution. Since the surface of the protruding structure formed by wet etching may still have a specific crystal plane, a heterogeneous structure that affects the quality of the epitaxy may be generated when the substrate is subsequently used for epitaxy. Therefore the next step is required.

[0036]Next, proceed to step 710, performing a second processing procedure on the protruding structure to make it a defect surface. This step is to make the surface height difference of the defect surface larger than the surface height difference of the pro...

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Abstract

The invention discloses a light-emitting diode substrate, a manufacturing method of the light-emitting diode substrate and a light-emitting diode. One surface of the light-emitting diode substrate is provided with a plurality of protruding structures which are formed through a first processing program. The surface of each protruding structure is a defect surface which is formed through a second processing program. The surface high-low difference of the defect surface of each protruding structure in a range which is equal to or larger than 0.5micrometer is larger than the high-low difference, through the first processing program, of each protruding structure. Due to the fact that the surface of each protruding structure is the defect surface, a heterostructure is prevented from being generated on the surface of each protruding structure, and luminance and light-emitting efficiency of the light-emitting diode are simultaneously improved, wherein the heterostructure influences quality of the epitaxy, and surface processing is not carried out on the protruding structure.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a light-emitting diode substrate, a manufacturing method thereof, and a light-emitting diode using the substrate. Background technique [0002] A light-emitting diode is a light-emitting component made of compound semiconductors, which can convert electrical energy into light and release it through the combination of electrons and holes. Light-emitting diodes are cold-emitting, so they have the advantages of low power consumption, no warm-up time, long component life, and fast response. In addition, they are small in size, impact-resistant, suitable for mass production, and easy to meet the needs of applications. It can be made into very small form or array form components. [0003] In order to make light-emitting diodes have greater application space and prospects in the future, how to improve the luminous brightness of light-emitting diodes is one of the researches th...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/00
Inventor 吴耀铨林博文彭俊彦牛振义王宝明徐文庆
Owner HANNSTAR DISPLAY NANJING
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