Method for fabrication of electrode structure, electrode structure and bulk acoustic wave resonator

A technology of bulk acoustic wave resonator and electrode structure, which is applied in the field of resonators and can solve problems such as inability to accurately reflect transverse acoustic waves.

Active Publication Date: 2022-03-01
深圳新声半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] When the electrode structure produced by the existing manufacturing process is applied to the resonator, it cannot accurately reflect the transverse sound wave with the same frequency as the resonator while ensuring the Q value of the resonator

Method used

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  • Method for fabrication of electrode structure, electrode structure and bulk acoustic wave resonator
  • Method for fabrication of electrode structure, electrode structure and bulk acoustic wave resonator
  • Method for fabrication of electrode structure, electrode structure and bulk acoustic wave resonator

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Embodiment Construction

[0035] In order to understand the characteristics and technical contents of the embodiments of the present invention in more detail, the implementation of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. The attached drawings are only for reference and description, and are not intended to limit the embodiments of the present invention. In the following technical description, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawings.

[0036] The terms "first", "second" and the like in the description and claims of the embodiments of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to...

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Abstract

The present application relates to the field of resonator technology, and discloses a method for making an electrode structure, including: depositing a dielectric layer on a predetermined electrode layer; the dielectric layer is used to protect the electrode layer; forming a sacrificial layer on the side away from the electrode layer, the sacrificial layer exposing the dielectric layer; depositing a metal layer on the sacrificial layer and the exposed dielectric layer; etching the the metal layer and corrodes the sacrificial layer, so that an air gap structure is formed between the metal layer and the dielectric layer. In this way, when the fabricated electrode structure is applied to the bulk acoustic wave resonator, it can accurately reflect the transverse acoustic wave with the same frequency as the resonator while ensuring the Q value of the resonator. The application also discloses an electrode structure and a bulk acoustic wave resonator.

Description

technical field [0001] The present application relates to the technical field of resonators, for example, to a method for fabricating an electrode structure, an electrode structure and a bulk acoustic wave resonator. Background technique [0002] The principle of the bulk acoustic wave resonator is to apply an electrical signal between the upper and lower electrodes, and then use the piezoelectric effect of the piezoelectric layer to generate an acoustic signal. The acoustic signal oscillates between the electrodes to generate transverse and longitudinal sound waves. Since the transverse acoustic wave with the same frequency as the resonator is not well confined within the body of the BAW resonator, the Q value of the BAW resonator is low. [0003] In the process of implementing the embodiments of the present invention, it is found that there are at least the following problems in the related art: [0004] When the electrode structure produced by the existing manufacturing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02007
Inventor 不公告发明人
Owner 深圳新声半导体有限公司
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