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Preparation method of SGT power MOSFET

A power and oxide layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low product capacity and competitiveness, high cost, etc., to increase product capacity, reduce product cost, and enhance product competitiveness Effect

Pending Publication Date: 2022-01-25
HEJIAN TECH SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the existing SGT power MOSFET usually uses a high-density plasma film (HDP film) as the internal oxide layer of the gate. In the process of manufacturing the SGT power MOSFET, an HDP machine is required, and a new layer of photomask is also required. (photo mask), the cost of its preparation method is relatively high, and the production capacity and competitiveness of the prepared product are relatively low

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  • Preparation method of SGT power MOSFET

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Embodiment Construction

[0041] It should be understood that the embodiments of the invention shown in the exemplary embodiments are illustrative only. Although only a few embodiments have been described in detail in the present invention, those skilled in the art will readily appreciate that many modifications are possible without materially departing from the teachings of the subject matter of the invention. Accordingly, all such modifications are intended to be included within the scope of this invention. Other substitutions, modifications, changes and deletions can be made to the designs, operating conditions and parameters of the following exemplary embodiments without departing from the gist of the present invention.

[0042] refer to figure 1 , figure 1 Show the flow process of the preparation method of SGT power MOSFET among the present invention, the step of this preparation method is as follows:

[0043] 1) Provide a first gate etch-back product, which includes a substrate 1, a trench 2, ...

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Abstract

The invention relates to a preparation method of an SGT power MOSFET. The method comprises the following steps: providing a first gate etching-back product; performing first groove etching on the first grid electrode; performing BOE etching removal on the shielding oxide layer; performing second groove etching on the first grid electrode; depositing an SACF oxide layer and an SiN layer in the groove; performing back etching on the SiN layer; performing IPO heating on the oxide layer in the trench; removing the SiN layer and the SACF oxide layer which are deposited before; depositing a GOX oxide layer; and depositing a second grid electrode to prepare the SGT power MOSFET. By means of the method, an HDP machine can be avoided, the product capacity is effectively improved, a photomask layer does not need to be added, the product cost can be reduced, and the product competitiveness is improved.

Description

technical field [0001] The present invention relates to a method for preparing a MOSFET, and more particularly, to a method for preparing a SGT power MOSFET. Background technique [0002] At present, the existing SGT power MOSFET usually uses a high-density plasma film (HDP film) as the internal oxide layer of the gate. In the process of manufacturing the SGT power MOSFET, an HDP machine is required, and a new layer of photomask is also required. (photo mask), the cost of its preparation method is relatively high, and the production capacity and competitiveness of the prepared product are relatively low. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a new method for preparing SGT power MOSFET different from the prior art. Through the method of the present invention, the present invention can avoid the HDP machine and does not need to add a photomask layer. [0004] In order to solve the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L21/336H01L29/78
CPCH01L29/4236H01L29/42364H01L29/66484H01L29/7831
Inventor 郑远程石新欢
Owner HEJIAN TECH SUZHOU