A method for monitoring ultra-low temperature ion implantation equipment by measuring vacuum degree

Abstract

The present invention provides a method for monitoring ultra-low temperature ion implantation equipment by measuring vacuum degree. The method for monitoring ultra-low temperature ion implantation equipment by measuring vacuum degree is suitable for ultra-low temperature ion implantation equipment; The step of staying at a fixed position, the step of raising the temperature of the wafer, the step of data processing and the step of analyzing and judging, the step of analyzing and judging is used to analyze and judge whether the process system of the machine to be tested is qualified. The method of the invention can regularly monitor the production status of the ultra-low temperature ion implantation equipment, realizes the monitoring of whether there is water vapor or carbon dioxide and other gas content in the ultra-low temperature ion implantation process, and can adjust the working state of the machine in real time, thereby improving the overall product yield.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for monitoring ultra-low temperature ion implantation equipment by measuring the degree of vacuum, which is suitable for ultra-low temperature ion implantation equipment. Background technique [0002] Semiconductor devices have been developing toward miniaturization for a long time. According to Moore's Law, the number of semiconductor devices integrated on a unit area of ​​an integrated circuit chip will double every 18 months. With the miniaturization of devices, Most of the internal structure of the device is bound to be proportionally reduced. At present, the critical dimensions of semiconductor devices have reached the nanometer or deep nanometer level, and the use of ultra-low temperature ion implantation technology to manufacture ultra-shallow junctions, abrupt junctions, and reduce ion implantation end-of-range defects (EOR Damage) has becom...

AI Technical Summary

Problems solved by technology

This layer of frost will block the subsequent ion implantation, resulting in a reduction in the ion implantation dose of the entire wafer and a decrease in the uniformity of ion implantation, which in turn will lead to a decrease in device performance and kill product yield.

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