Three-level power module
A power module, three-level technology, applied in the direction of output power conversion devices, electrical components, electrical equipment structural parts, etc.
Pending Publication Date: 2022-01-28
SHENZHEN HOPEWIND ELECTRIC CO LTD
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Problems solved by technology
[0002] In compact stacked power string modules, power semiconductor devices can include integrated gate commutated thyristors (IGCTs), insulated gate bipolar transistors (IGBTs), injection enhanced gate transistors (IEGTs), thyristors (ETT or LTT) and Diode modules and power modules have vertical compact stacking mode and horizontal compact stacking mode, among which horizontal compact stacking power strings currently have single or multiple columns, but horizontal compact stacking single-row power modules do not have a more structural Compact structure with higher power density
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Embodiment 1
[0018] see figure 1 and figure 2 , figure 1 is the front view of the three-level power module of the present invention, figure 2 It is the rear view of the three-level power module of the present invention; this embodiment discloses a three-level power module, including a module structure main body and a power semiconductor component arranged inside the module structure body, and the power semiconductor component includes N compression type controllable power semiconductor switching devices 11, 12, 13, 14, M compression type diodes 21, 22, 23, 24, K compression type water cooling radiators 4 and press-fitting mechanism 9, each compression type Compression-type controllable power semiconductor switching devices 11, 12, 13, 14, each compression-type diode 21, 22, 23, 24 and each compression-type water-cooling radiator 4 are arranged in a row in order and arranged at the left end of the main body of the module structure face and the middle of the right end face; through the ...
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The invention discloses a three-level power module, and the module comprises a module structure main body and a power semiconductor assembly arranged in the module structure main body; the power semiconductor assembly comprises N compressed controllable power semiconductor switch devices, M compressed diodes, K compressed water-cooling radiators and a press fitting mechanism; the compressed controllable power semiconductor switching devices, the compressed diodes and the compressed water-cooled radiators are arranged in a row in sequence and are arranged between the left end surface and the right end surface of the module structure main body; the N compressed controllable power semiconductor switching devices, the M compressed diodes and the K compressed water-cooling radiators are pressed together through the press fitting mechanism; the three-level power module structure realizes more compact structural layout, higher power density and lower cost of a compressed stacked single-row power device.
Description
technical field [0001] The invention relates to the technical field of power electronic products, in particular to a three-level power module. Background technique [0002] In compact stacked power string modules, power semiconductor devices can include integrated gate commutated thyristors (IGCTs), insulated gate bipolar transistors (IGBTs), injection enhanced gate transistors (IEGTs), thyristors (ETT or LTT) and Diode modules and power modules have vertical compact stacking mode and horizontal compact stacking mode, among which horizontal compact stacking power strings currently have single or multiple columns, but horizontal compact stacking single-row power modules do not have a more structural Compact structure with higher power density. [0003] Therefore, there is an urgent need for a three-level power module that realizes compact stacked single-row power devices with a more compact structure layout, higher power density, and lower cost. Contents of the invention ...
Claims
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Login to View More IPC IPC(8): H02M1/00H05K7/20
CPCH02M1/00H05K7/20927
Inventor 张嘉乐周党生吕一航李海龙
Owner SHENZHEN HOPEWIND ELECTRIC CO LTD