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Red light epitaxial layer and etching repair method thereof, LED chip and electronic equipment

A repair method and technology of etching equipment, which is applied to circuits, electrical components, semiconductor devices, etc., and can solve problems such as low luminous efficiency of red LED chips and damage to red epitaxial layers

Pending Publication Date: 2022-02-11
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the deficiencies of the above-mentioned related technologies, the purpose of this application is to provide a red epitaxial layer and its etching repair method, LED chip and electronic equipment, aiming to solve the problem of red LED chip damage caused by the damage of the red epitaxial layer during the etching stage. The problem of low luminous efficiency

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  • Red light epitaxial layer and etching repair method thereof, LED chip and electronic equipment
  • Red light epitaxial layer and etching repair method thereof, LED chip and electronic equipment
  • Red light epitaxial layer and etching repair method thereof, LED chip and electronic equipment

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[0043] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.

[0045] In the LED chip manufacturing process, after the epitaxial layer is grown,...

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Abstract

The invention relates to a red light epitaxial layer and an etching repair method thereof, an LED chip and electronic equipment. After the red light epitaxial layer is etched, a phosphorus-containing fluid is introduced into the etching equipment, and the phosphorus-containing fluid is dissociated to obtain phosphorus plasma, so phosphorus atoms lost due to etching are filled by using the phosphorus plasma, the problem that the atomic ratio of the surface of the red light epitaxial layer is unbalanced is solved, dangling bonds and non-radiative recombination centers on the surface are reduced, the performance of the red light epitaxial layer is improved, and the luminous efficiency of a red light LED chip prepared from the red light epitaxial layer is improved.

Description

technical field [0001] The present invention relates to the field of LED (Light-Emitting Diode, light-emitting diode), in particular to a red light epitaxial layer and its etching repair method, LED chip and electronic equipment. Background technique [0002] When the size of the LED chip is very small, such as Mini-LED (mini light-emitting diode) or Micro-LED (micro-light-emitting diode), the external quantum efficiency (EQE, External Quantum Efficiency) of the LED chip will drop seriously, which is mainly due to Because in the preparation process of the LED chip, the ion bombardment introduced in the etching stage has caused damage to the surface of the epitaxial layer of the LED chip, forming many surface dangling bonds and non-radiative recombination centers. These defects lead to accelerated recombination of non-radiative carriers, directly It affects the quantum efficiency of the LED chip and reduces the device performance. The luminous efficiency of red LED chips is ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/30
CPCH01L33/14H01L33/0062H01L33/305
Inventor 苟先华肖峰张彬彬张涛苏财钰
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD