Semiconductor device and method for manufacturing semiconductor device
A semiconductor and conductor technology, applied in the fields of transistors, semiconductor devices and electronic equipment, can solve the problems of small leakage current and achieve the effects of large on-state current, good reliability and good electrical characteristics
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment approach 1
[0073] In this embodiment, refer to Figures 1A to 17B An example of a semiconductor device including the transistor 200 a and the transistor 200 b according to one embodiment of the present invention and a method of manufacturing the same will be described. Note that the transistor 200a and the transistor 200b may be collectively referred to as the transistor 200 below.
[0074]
[0075] refer to Figure 1A to Figure 1D The structure of the semiconductor device including the transistor 200a and the transistor 200b will be described. Figure 1A is a plan view of the semiconductor device. Figure 1B to Figure 1D is a cross-sectional view of the semiconductor device. here, Figure 1B is along Figure 1A The cross-sectional view of the dotted line A1-A2 in , which is equivalent to the cross-sectional view along the channel length direction of the transistor 200a and the transistor 200b. Figure 1C is along Figure 1A The cross-sectional view of the dotted line A3-A4 in , wh...
Embodiment approach 2
[0437] In this embodiment, refer to Figure 17A to Figure 22 One embodiment of a semiconductor device that can be used as a memory device will be described.
[0438] [storage device 1]
[0439] Figure 17A An example of a semiconductor device (storage device) according to one embodiment of the present invention is shown. Figure 17A In the illustrated semiconductor device, a capacitor 100a is arranged on a transistor 200a and a capacitor 100b is arranged on a transistor 200b. Note that capacitor 100 a and capacitor 100 b may be collectively referred to as capacitor 100 hereinafter.
[0440] As the transistor 200a and the transistor 200b, the transistor 200a and the transistor 200b described in the above embodiment can be used. That is to say, Figure 17A The semiconductor device shown has the Figure 1A to Figure 1D The semiconductor device shown has a structure in which a capacitor 100a and a capacitor 100b are provided. Note that the structures of the transistor 200a ...
Embodiment approach 3
[0546] In this embodiment, refer to Figure 23A , Figure 23B as well as Figure 24A to Figure 24C , a storage device (hereinafter sometimes referred to as an OS storage device) using a transistor using an oxide as a semiconductor (hereinafter sometimes referred to as an OS transistor) and a capacitor according to one embodiment of the present invention will be described. An OS storage device is a storage device including at least a capacitor and an OS transistor that controls charge and discharge of the capacitor. The OS memory device has excellent retention characteristics because the off-state current of the OS transistor is extremely small, and thus can be used as a nonvolatile memory.
[0547]
[0548] Figure 23A An example of the structure of the OS storage device is shown. The memory device 1400 includes a peripheral circuit 1411 and a memory cell array 1470 . The peripheral circuit 1411 includes a row circuit 1420 , a column circuit 1430 , an output circuit 144...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More