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Nanowire device

A technology of nanowires and nanocones, used in the growth and manufacture of optoelectronic devices, which can solve problems such as degradation of electronic properties

Pending Publication Date: 2022-03-18
科莱约纳诺公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Any contamination or defect in the graphene layer can lead to degradation of its electronic properties

Method used

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Embodiment Construction

[0079] The present invention relates to a positioning nanowire or nanoteon of nanowires by a graphene layer. Semiconductor nanowires or nanoteon arrays comprise a plurality of nanowires or nanocoelas from the substrate or from the intermediate layer between the substrate and the graphene layer.

[0080] In a specific aspect, the present invention relates to a mask for positioning a graphene layer with an upper / additional mask layer as a substrate for positioning nanowires or nanometrics. The graphene layer is transparent, electrically conductive and flexible. The semiconductor nanowire or nanoteon container comprises a plurality of nanowires or nanotene from the substrate. If the composition contains an intermediate layer between the substrate and the graphene layer, the nanowire or nanoteon is extends from the intermediate layer.

[0081] The nanowires or nano cone with epitaxial growth provide homogeneity, which enhances various final properties, such as structures, mechanical...

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Abstract

A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga2O3, or III-V semiconductor substrate; wherein there are a plurality of pores passing through the graphene layer; and wherein a plurality of nanowires or nanocones are grown from the substrate in the pores, the nanowires or nanocones comprising at least one semiconductor group III-V compound.

Description

Technical field [0001] The present invention relates to the growth and manufacture of photoelectrodes using a graphene layer as a transparent and / or conductive electrode on a substrate. The graphene layer is capable of providing a mask layer, and two layers perform a pore patterning to allow the semiconductor nanowires or nanotechnyl tapered from the substrate to grow. The invention also relates to a composition having an intermediate layer between the substrate and the graphene layer, which can affect / promote the growth of the semiconductor structure in the pylon pattern by remote epitaxial. The invention also relates to a substance composition having an influencing / promoting a semiconductor substrate that proceeds to the distance. The material composition formed can be used in photoelectric devices such as an LED or photodetector (photodetector). Background technique [0002] In recent years, with nanotechnology to become an important engineering discipline, people are in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/06H01L31/0304
CPCH01L21/0262H01L21/02631H01L21/02378H01L21/02389H01L21/02502H01L21/02573H01L21/02647H01L21/02458H01L21/02381H01L21/02414H01L21/02499H01L21/0254H01L21/02603H01L21/02642H01L21/0242H01L21/02444H01L33/06H01L33/007H01L31/0304Y02E10/544H01L31/03048H01L31/035236H01L31/035281H01L31/0392H01L31/1848H01L31/1852H01L33/08H01L33/12H01L33/24H01L33/32
Inventor 马齐德·孟希赫尔格·韦曼达萨·L·德赫拉杰比约恩-奥韦·M·菲姆兰莱杜尔夫·维根戴维·巴里埃
Owner 科莱约纳诺公司