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A kind of polishing pad and manufacturing method of semiconductor device

A manufacturing method and polishing pad technology, which are used in semiconductor/solid-state device manufacturing, workpiece feed motion control, and manufacturing tools, etc., can solve the problems of recovery performance decline, deterioration, performance degradation, etc., and achieve a small and good NU value fluctuation. Stability, stable process effect

Active Publication Date: 2022-05-10
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the prior art, the polishing pad is mainly composed of a polyurethane polishing layer and a buffer layer. The polyurethane polishing layer generally has a hard structure, while the buffer layer often has a soft and elastic structure, and the polyurethane polishing layer is relatively hard. The structure plays the role of polishing, while the buffer layer plays a role of buffering and supporting during the polishing process. In long-term use, the polishing pad is repeatedly compressed and restored, which will cause a decline in performance, mainly because of compression and During the recovery process, the sliding at the molecular level brings internal heat generation, resulting in a decline in recovery performance, which is mainly manifested in a significant deterioration of the edge profile as the life cycle (lifetime) prolongs in polishing trend, which eventually leads to an increase in grinding rate non-uniformity (NU), that is, a decrease in planarization performance

Method used

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  • A kind of polishing pad and manufacturing method of semiconductor device
  • A kind of polishing pad and manufacturing method of semiconductor device
  • A kind of polishing pad and manufacturing method of semiconductor device

Examples

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preparation example Construction

[0080] The preparation method of the polyurethane polishing layer in the present invention is: mixing the first isocyanate-terminated prepolymer in the liquid state with the hollow microporous polymer, and obtaining the first product after vacuum degassing; Mix it with the first curing agent under high-speed shear to obtain the second product, and then cast it into a circular mold. After curing and cooling to room temperature, cut it into thin slices with a thickness of 50-80 mils to obtain a polyurethane polishing layer.

[0081]

[0082] In the present invention, the back side of the polyurethane polishing layer is provided with a buffer layer, which can reduce the impact applied to the polishing pad during the polishing process, and the elastic modulus of the buffer layer is higher than that of the polyurethane polishing layer. A layer necessary to balance both planarity and uniformity of the relationship. Planarity refers to the flatness of the pattern portion when polish...

Embodiment

[0132] The present invention will be further described below with reference to the schematic examples shown in the accompanying drawings. Through the following description, the advantages of various aspects of the present invention will be more obvious. In the accompanying drawings, the same reference numerals refer to the same components. In the schematic drawings The shape and size of each component are for illustration only, and cannot be recognized as reflecting the actual shape, size and absolute position.

[0133] DMF: N,N-dimethylformamide;

[0134] MOCA: 4,4'-methylene-bis-(2-chloroaniline);

[0135] MCDEA: 4,4'-methylene-bis-(3-chloro-2,6-diethylaniline);

[0136] TDI: toluene diisocyanate;

[0137] HMDI: dicyclohexylmethane diisocyanate;

[0138] MDI: diphenylmethane diisocyanate;

[0139] PTMEG: polytetrahydrofuran;

[0140] PPG: polypropylene glycol;

[0141] PU: Polyurethane foaming resin;

[0142] Preparation of polyurethane polishing layer:

preparation example 1

[0144] 1. The first isocyanate-terminated prepolymer (containing 9% by mass of unreacted-NCO groups) obtained by reacting 95 parts by mass of TDI, 5 parts by mass of HMDI and 175 parts by mass of PTMEG-650 was heated to 80°C , degassing under vacuum (~0.095MPa) for 2 hours in order to remove the gas and small molecular compounds in the prepolymer; take 100 parts by mass of the above prepolymer, and then add 1.7 parts by mass of standard particle size D 50 It is a hollow microsphere polymer of 40 μm, and the hollow microsphere polymer is uniformly dispersed in the prepolymer under stirring, and degassed again under vacuum (~0.095MPa) for 5 minutes, and is ready for use.

[0145] 2. Raise the temperature of 24.9 parts by mass of MOCA to 115°C to completely melt it into a clear and transparent liquid.

[0146] 3. Using the first curing agent to cure the prepolymer containing the hollow microsphere polymer. The prepolymer is mixed with the curing agent under high shear, then cast...

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PUM

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Abstract

The invention relates to a manufacturing method of a polishing pad and a semiconductor device, wherein the polishing pad is applied with a pressure F 0 Restoring force F at time t after the stress relaxation stage t with applied pressure F 0 The ratio of and t satisfy the fitting relationship in the following formula (1), where the restoring force F t The value frequency is 0.01s / time, 0≤t≤30s, the a and b are constants, and satisfy: 0.95≤a≤0.99 and / or 0.02≤b≤0.04, goodness of fit R 2 ≥0.94, for the polishing pad satisfying the above fitting relationship, the removal rate curve and edge removal rate remain stable throughout the life cycle of the polishing pad, with small fluctuations, and the fluctuation of the grinding rate non-uniformity NU value is small. f(t)=F t / F 0 =a·t ‑b (1).

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization polishing, in particular to a manufacturing method of a polishing pad and a semiconductor device. Background technique [0002] With the development of the feature size of integrated circuits towards the deep nanometer process, the feature size is getting smaller and smaller, and the defects caused by the CMP process become more and more prominent in the advanced process, and even reach the level that seriously affects the performance of the chip. . For this reason, as one of the four core materials of the CMP process, the pursuit of the ultimate performance of the polishing pad is an eternal topic in the research and development of the polishing pad. For the performance indicators of polishing pads, the ultimate stability and uniformity have gained more and more consensus in the CMP field. The requirements for the stability and uniformity of polishing pads are graduall...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/22B24B37/24B24B37/26B24B37/005B24B49/00H01L21/3105
CPCB24B37/22B24B37/24B24B37/26B24B37/005B24B49/006H01L21/31053B24D3/28H01L21/67092
Inventor 罗乙杰张季平高越刘敏
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD