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Novel group V and group VI transition metal precursors for thin film deposition

A precursor and selected technology, applied in the direction of metallocene, metal material coating technology, chemical instruments and methods, etc., can solve the problems of high temperature and complexity at the end of decomposition

Pending Publication Date: 2022-04-01
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The decomposition mechanism is complex and depends on the nature of the carrier gas, but in both cases the temperature at which the decomposition ends (900 °C) is too high for their practical use in low temperature CVD processes

Method used

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  • Novel group V and group VI transition metal precursors for thin film deposition
  • Novel group V and group VI transition metal precursors for thin film deposition
  • Novel group V and group VI transition metal precursors for thin film deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0150] Trichloro(tert-amylimino)vanadium(V)

[0151] Dissolve 4.4g of tert-amylamine (50mmol) in 60mL of anhydrous hexane, and use activated Molecular sieves were dried overnight. The next day, the tert-amylamine solution was added dropwise to 13.1 g VOCl at -78 °C over the course of 1 hr 3 In solution (76 mmol) in 90 mL of anhydrous hexane. After this time, the reaction was slowly warmed to room temperature and stirred overnight. After 24h, the stirring was stopped, and the reaction suspension was allowed to settle for 1 hour, and then in N 2 Filter the solution. The filtrate was dried in vacuo to give 2.3 g of a dark orange liquid. This was further dried under vacuum to yield 1.9 g of solid (crude yield 10%).

[0152] The crude product was further purified by sublimation under vacuum (20 mtorr). First pump the sublimator under vacuum for several hours at room temperature to remove any residual VOCl 3 . Place a liquid nitrogen trap between the sublimator and the Sch...

Embodiment 2

[0157] tert-Amylimino-tris(dimethylamino)vanadium(V)

[0158] In a 100 mL Schlenk flask, trichloro(tert-amylimino)vanadium(V) (1.27 g, 5.287 mmol) was dissolved in 50 mL of anhydrous hexane. Add 812 mg LiNMe slowly over 10 minutes 2 (15.92 mmol, Sigma Aldrich), no significant exotherm was observed. The flask was removed from the glove box and connected to a Schlenk line. After stirring for 24 hours, a dark brown solution formed with a light brown precipitate. After filtering off the solids, the dark brown solution was pumped under vacuum to give 1.4 g of a dark brown oil.

[0159] The crude product was distilled at 80° C. under 0.1 Torr vacuum to obtain 1.0 g of orange liquid as the final product (71% overall yield). 1 H NMR (400MHz, D8 toluene) δ=3.41(s, 18H), 1.59(q, 2H), d=1.33(s, 6H), δ=1.12(t, 3H), shown in Figure 5 middle. 51V NMR (400MHz) δ=-251.76, shown in Figure 6 middle. Also through such as Figure 7 Thermogravimetric analysis (TGA) as shown and as Fig...

Embodiment 3

[0161] Trichloro(sec-butylimino)vanadium(V)

[0162] 7.3 g of sec-butylamine (0.1 mol) was dried in 100 mL of anhydrous hexane for 48 h using molecular sieves. In the glove box, add 26 g of VOCl to a 500 mL Schlenk flask 3 (0.15mol) and 200mL of anhydrous hexane. Transport the flask to a fume hood and connect to a Schlenk line. The flask was cooled to -78°C. The sec-butylamine hexane solution was added slowly over the course of 1 h. The solution darkened immediately. The solution was cooled under dry ice for an additional 1 hour, then the solution was allowed to warm slowly to room temperature. The mauve reaction mixture was stirred overnight at room temperature. After overnight, the mixture separated into two phases. Allow the mixture to settle for half an hour, and use a cannula under N 2 Next, transfer the supernatant to a separate 500 mL Schlenk flask. The precipitate was washed with an additional 50 mL of anhydrous hexane, then transferred.

[0163] will be imme...

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Abstract

Described herein are Group V and Group VI compounds useful as precursors for deposition of Group V and Group VI containing films. Ligands bearing alkyl, amine, imino, amidino and / or cyclopentadienyl (Cp) ligands are used to form Group V and Group VI complexes for use as precursors. Examples of group V and group VI precursor compounds include, but are not limited to, Cp aminoimino alkyl vanadium compounds, Cp aminoimino alkylamino vanadium compounds, Cp aminoimino alkoxy vanadium compounds, Cp aminoimino amidino vanadium compounds, and alkylamino vanadium trichloride compounds. Group V and group VI precursors are used for deposition on substrate surfaces with excellent film properties, such as uniformity, continuity, and low resistance. Examples of a substrate surface for depositing a metal-containing film include, but are not limited to, metals, metal oxides, and metal nitrides.

Description

[0001] Cross references to related patent applications [0002] This application claims the benefit of U.S. Application No. 62 / 857,650, filed June 5, 2019. The disclosure of Application No. 62 / 857,650 is incorporated herein by reference. Background technique [0003] Described herein are organometallic compounds comprising Group V and Group VI transition metals, compositions containing these compounds, and methods of using these compounds as precursors in the deposition of metal-containing films. [0004] Transition metal containing films are used in semiconductor and electronic applications. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been applied as the main deposition techniques for producing thin films for semiconductor devices. These methods enable the realization of conformal films (metals, metal oxides, metal nitrides, metal suicides, etc.) through chemical reactions of metal-containing compounds (precursors). Chemical reactions occur on s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F9/00C07F11/00C07F17/00C23C16/18C23C16/24C23C16/34C23C16/40C23C16/455
CPCC07F9/00C23C16/34C23C16/45553C23C16/405C23C16/18C01B21/0617C07F9/005C23C16/45536
Inventor 李国璨S·V·伊瓦诺维雷新建李宏波
Owner VERSUM MATERIALS US LLC