Method and system for acquiring threshold voltage distribution and related components

Abstract

The invention discloses a threshold voltage distribution obtaining method and system and a related component, which are applied to data storage equipment, and the obtaining method comprises the following steps: sequentially issuing test voltages of a plurality of gears corresponding to each read voltage to a data storage block, and obtaining data of the data storage block under each test voltage; de-noising all the data corresponding to the read voltage by using the standard data corresponding to each read voltage to obtain corresponding de-noised data; and according to all the de-noised data, determining corresponding bit flipping data so as to determine threshold voltage distribution of the data storage block. According to the application, when the threshold voltage distribution is determined, the standard data is taken as a denoising basis, all the preliminarily acquired data is denoised, so that the interference on the NAND when the continuous read voltage is applied to the NAND is eliminated, then the threshold voltage distribution is determined by using the denoised data, and the result is more accurate and effective.

Description

technical field [0001] The present invention relates to the field of threshold voltage distribution, in particular to a threshold voltage distribution acquisition method, system and related components. Background technique [0002] At present, the distribution of threshold voltage can intuitively reflect the charge distribution of cells in NAND (NAND flash memory, NAND flash memory) particles. Therefore, in the prior art, the threshold voltage of a specific NAND is often read according to a certain voltage level, so as to determine the According to the charge distribution, the abnormality of the data can be judged according to whether there is a left-right shift in the charge distribution, the bottom of the valley is raised, etc., and at the same time, the read voltage can be adjusted according to the shift of the bottom of the valley for error correction. [0003] Specifically, the existing calculation of threshold voltage distribution generally calculates the relevant numb...

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Problems solved by technology

[0003] Specifically, the existing calculation of threshold voltage distribution generally calculates the relevant number of cells in each state of NAND by counting the flipped bits in adjacent gears. Due to voltage interference and random jumps, the read threshold voltage contains more noise, which affects the counting statistics of bit flips, thereby reducing the identifiability of the threshold voltage distribution

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