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Molybdenum deposition

An oxide and metal surface technology, applied in the field of molybdenum deposition, which can solve problems such as low resistivity metal films

Pending Publication Date: 2022-04-12
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the uniform deposition of low-resistivity metal films has become a challenge as the industry uses shrinking equipment and more complex patterning schemes

Method used

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  • Molybdenum deposition
  • Molybdenum deposition
  • Molybdenum deposition

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Embodiment Construction

[0020] This article provides methods for filling patterned features with molybdenum (Mo). The method involves selectively depositing a molybdenum (Mo) film on the bottom metal-containing surface of a feature that includes a dielectric sidewall. Selective growth of Mo on this bottom surface enables bottom-up growth and high-quality void-free filling.

[0021] figure 1 An example of feature 100 is depicted in accordance with various embodiments. Feature 100 includes a bottom surface 102 and one or more sidewall surfaces 104 . An etch stop layer (ESL) 106 is also shown. Bottom surface 102 may be a metal-containing surface. Structure 100 is filled with molybdenum to form Mo interconnects 108 that provide electrical connections to underlying contacts.

[0022] In some embodiments, bottom surface 102 is a metal-containing surface. The metal-containing surface may comprise any suitable metal, such as cobalt (Co), ruthenium (Ru), copper (Cu), tungsten (W), molybdenum (Mo), nicke...

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Abstract

Methods of filling patterned features with molybdenum (Mo) are provided. The method involves selectively depositing a molybdenum (Mo) film on a bottom metal-containing surface comprising features of dielectric sidewalls. Selective growth of Mo on the bottom surface enables bottom-to-top growth and high quality void-free filling. Related devices are also provided.

Description

[0001] incorporated by reference [0002] The PCT application form is filed as part of this application at the same time as this specification. Each application from which this application claims the benefit or priority, as identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes. Background technique [0003] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor impliedly admitted to be prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that cannot be determined to be prior art at the time of filing. technology. [0004] Metal deposition is an integral part of many semiconductor manufacturing processes. These materials can be used for horizontal interconnects, vias between adjacent metal layers...

Claims

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Application Information

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IPC IPC(8): H01L21/768C23C16/14C23C16/455
CPCC23C16/04C23C16/0245C23C16/045C23C16/45553C23C16/08H01L21/76879H01L21/28562H01L21/76804H01L23/53257H01L21/76814C23C16/45534C23C16/14H01L21/28568
Inventor 罗郑硕谢耀宗照健·史蒂文·黎帕特里克·范克利蒙布特
Owner LAM RES CORP