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Electronic devices with recessed conductive structures and related methods and systems

A technology of conductive structures and electronic devices, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as increasing the difficulty of electrical connections

Pending Publication Date: 2022-04-22
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing the spacing between adjacent vertical memory strings may increase the difficulty of making individual electrical connections to vertical memory strings without shorting adjacent vertical memory strings

Method used

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  • Electronic devices with recessed conductive structures and related methods and systems
  • Electronic devices with recessed conductive structures and related methods and systems
  • Electronic devices with recessed conductive structures and related methods and systems

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0111] Embodiment 1: An electronic device comprising: a stack structure comprising vertically alternating insulating structures and conductive structures arranged in layers; a guide post extending vertically through the stack structure; a barrier material on which Overlying the stack structure; a first insulating material extending through the barrier material and into an upper layer portion of the stack structure; and a second insulating material laterally adjacent to the first insulating material and laterally adjacent to all At least some of the conductive structures in the upper layer portion of the stack structure, at least a portion of the second insulating material is vertically aligned with the barrier material.

Embodiment 2

[0112] Embodiment 2: The electronic device of Embodiment 1, further comprising a contact plug in an upper portion of the guide post and a contact structure overlying the stack structure, wherein the contact structure passes through the barrier material The openings in the contacts directly physically contact the contact plugs.

Embodiment 3

[0113] Embodiment 3: The electronic device of Embodiment 1 or Embodiment 2, wherein the first insulating material comprises a substantially continuous material extending between adjacent sub-blocks of the stacked structure.

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PUM

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Abstract

The invention relates to electronic devices with recessed conductive structures and related methods and systems. The electronic device includes: a stacked structure including vertically alternating insulating structures and conductive structures arranged in layers; the guide column vertically extends to penetrate through the stacking structure; and a barrier material overlying the stacked structure. The electronic device includes a first insulating material extending through the barrier material and into an upper layer portion of the stacked structure and a second insulating material laterally adjacent to the first insulating material and laterally adjacent to at least some of the conductive structures in the upper layer portion of the stacked structure. At least a portion of the second insulating material is vertically aligned with the barrier material.

Description

[0001] priority application [0002] This application requires the filing date of U.S. Patent Application No. 17 / 064,092, "ELECTRONIC DEVICES WITH RECESSED CONDUCTIVESTRUCTURES AND RELATED METHODS AND SYSTEMS," filed October 6, 2020. rights and interests. technical field [0003] Embodiments disclosed herein relate to electronic devices and electronic device manufacturing. More specifically, embodiments of the present disclosure relate to electronic devices having recessed conductive structures and insulating extensions adjacent to the recessed conductive structures, and related methods and systems. Background technique [0004] Memory devices provide data storage for electronic systems. Flash memory devices are one of various types of memory devices that find many uses in modern computers and other electrical devices. A conventional flash memory device includes a memory array having a large number of charge storage devices (eg, memory cells, such as non-volatile memory ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11575H01L27/11582H10B43/27H10B43/35H10B43/50
CPCH10B43/35H10B43/50H10B43/27G11C16/0483G11C16/0466H01L29/40117H10B43/10G11C11/5671H01L21/76897H01L21/76879
Inventor S·古普塔A·查杜鲁S·M·I·侯赛因
Owner MICRON TECH INC