Spin orbit moment magnetic memory cell

A technology of spin-orbit and memory cells, applied in electrical components, magnetic field-controlled resistors, material selection, etc., can solve problems such as complex implementation

Pending Publication Date: 2022-05-13
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for a magnetic tunnel junction with perpendicular magnetization, the spin-orbit moment alone cannot accurately flip the magnetic moment of the free layer.
A common solution is to introduce an external magnetic field, but it is more complicated to implement, so it is necessary to propose a magnetic unit structure that can achieve deterministic flipping of the free layer without an external magnetic field

Method used

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  • Spin orbit moment magnetic memory cell
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Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention, but it should be understood that these descriptions are only Exemplary, not intended to limit the scope of the present disclosure. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0028] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are no...

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Abstract

The invention provides a spin-orbit moment magnetic storage unit which comprises a heavy metal layer, a magnetic tunnel junction located on one side of the heavy metal layer and a shunt electrode located on the other side of the heavy metal layer, the material of the heavy metal layer has a spin-orbit moment effect, and the heavy metal layer is of a non-centrosymmetric structure in a first direction or a second direction. Wherein the first direction is the direction of current flowing from one end to the other opposite end in the heavy metal layer, and the second direction is the direction opposite to the first direction; the free layer and the reference layer of the magnetic tunnel junction have magnetic anisotropy perpendicular to the surface of the heavy metal layer; and the shunting electrode and the magnetic tunnel junction have opposite overlapping areas. According to the spin-orbit moment magnetic storage unit, deterministic flipping of the magnetic tunnel junction free layer can be realized.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a spin-orbit moment magnetic memory unit. Background technique [0002] Compared with spin-transfer torque magnetic memory (STT-MRAM), magnetic memory (SOT-MRAM) based on spin-orbit torque (SOT-MRAM) has higher writing speed and lower power consumption, and has application prospects Better, it is considered to be the main writing method of the next generation MRAM. [0003] The core of the SOT-MRAM memory cell is the magnetic tunnel junction. The principle is to use the spin Hall effect (Spin Hall effect, SHE) and the Rashba (Rashba) effect to realize the reversal of the magnetic moment of the free layer, thereby changing the resistance of the magnetic tunnel junction. Implement data storage. But for the vertically magnetized magnetic tunnel junction, the spin-orbit moment alone cannot make the free layer magnetic moment flip accurately. A common solution is to introdu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/08H01L43/10H01L27/22
CPCH10B61/00H10N52/00H10N50/85H10N50/10
Inventor 石以诺孟皓迟克群李州
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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