Magnetic memory unit structure and data writing method thereof

Abstract

The invention provides a magnetic storage unit structure and a data writing method thereof. The magnetic storage unit structure includes a strong spin-orbit coupling layer and a magnetic tunnel junction arranged on the strong spin-orbit coupling layer. The strong spin-orbit coupling The layer includes a first path and a second path forming a preset angle, and the first path and the second path respectively include two input terminals arranged on both sides of the magnetic tunnel junction, and the method includes: One of the two input terminals of the first path or the second path inputs a first section of current to the strong spin-orbit coupling layer; The track coupling layer inputs a second segment of current for a predetermined length of time to flip the magnetic moment of the free layer, wherein the input end of the second segment of current is based on the input end of the first segment of current, to be written The input data and the direction of the magnetic moment of the reference layer are determined, and the invention can ensure the deterministic reversal of the magnetic moment of the magnetic tunnel junction.

Description

technical field [0001] The present invention relates to the technical field of magnetic storage unit structures, and in particular, to a magnetic storage unit structure and a data writing method thereof. Background technique [0002] As the size of the semiconductor process continues to shrink, Moore's Law slows down, the increase in leakage current and the interconnection delay become the bottleneck of traditional CMOS memory. Finding solutions for next-generation storage technologies has become the focus of integrated circuit research, among which magnetic random access memory has received extensive attention. Compared with traditional devices, magnetic random access memory (MRAM) has the advantages of unlimited erasing and rewriting times, non-volatility, fast reading and writing speed, and radiation resistance. Ideal for memory and in-memory computing. [0003] In the development process of MRAM, it has mainly experienced three generations of writing methods. The firs...

AI Technical Summary

Problems solved by technology

The first generation of MRAM uses a magnetic field to implement data writing, but the required current is high and cannot be reduced with the reduction of the size of the magnetic tunnel junction, so the application prospect is limited

The second-generation MRAM uses current-induced spin transfer torque (Spin transfer torque, STT) to realize data writing, which solves the disadvantages of the above-mentioned magnetic field writing method, but currently affected by the relaxation time (Incubation delay), STT -The writing speed of MRAM is severely restricted, and both the writing current and the reading current pass directly through the magnetic tunnel junction, which can easily cause problems such as read disturbance (Read disturbance) and barrier breakdown (Barrier breakdown)

However, in practical applications, the use of an external magnetic field will increase the complexity of the circuit design, cause additional power consumption, and the feasibility is low, so other solutions need to be found

Images