Magnetic memory cell structure and data writing method thereof

Abstract

The invention provides a magnetic memory cell structure and a data writing method thereof.The magnetic memory cell structure comprises a strong spin-orbit coupling layer and a magnetic tunnel junction arranged on the strong spin-orbit coupling layer, and the strong spin-orbit coupling layer comprises a first path and a second path which form a preset included angle; the first path and the second path respectively comprise two input ends arranged at the two sides of the magnetic tunnel junction. The method comprises the following steps: inputting a first section of current to the strong spin orbit coupling layer through one of the two input ends of the first path or the second path; and inputting a second section of current with a preset time length to the strong spin-orbit coupling layer through a path different from the first section of current, so that the magnetic moment of the free layer is overturned, and the input end for inputting the second section of current is determined according to the input end of the first section of current, data to be written and the magnetic moment direction of the reference layer. According to the invention, the deterministic flipping of the magnetic moment of the magnetic tunnel junction can be ensured.

Description

technical field [0001] The invention relates to the technical field of magnetic storage unit structures, in particular to a magnetic storage unit structure and a data writing method thereof. Background technique [0002] With the continuous shrinking of semiconductor process dimensions, Moore's Law slows down, and the increase of leakage current and interconnection delay become the bottleneck of traditional CMOS memory. Finding a new generation of storage technology solutions has become the focus of integrated circuit research, and magnetic random access memory has received extensive attention. Compared with traditional devices, Magnetic random access memory (MRAM) has the advantages of unlimited erasing times, non-volatility, fast read and write speed, and radiation resistance. It is expected to become a general-purpose memory and is the next generation of non-volatile Ideal devices for memory and in-memory computing. [0003] In the development of MRAM, it mainly experie...

AI Technical Summary

Problems solved by technology

The first generation of MRAM uses a magnetic field to implement data writing, but the required current is high and cannot be reduced with the reduction of the size of the magnetic tunnel junction, so the application prospect is limited

The second-generation MRAM uses current-induced spin transfer torque (Spin transfer torque, STT) to realize data writing, which solves the disadvantages of the above-mentioned magnetic field writing method, but currently affected by the relaxation time (Incubation delay), STT -The writing speed of MRAM is severely restricted, and both the writing current and the reading current pass directly through the magnetic tunnel junction, which can easily cause problems such as read disturbance (Read disturbance) and barrier breakdown (Barrier breakdown)

However, in practical applications, the use of an external magnetic field will increase the complexity of the circuit design, cause additional power consumption, and the feasibility is low, so other solutions need to be found

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