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Spin orbit moment-based memory cell and manufacturing method thereof

A technology of spin-orbit and memory cells, which is applied in the manufacture/processing of electromagnetic devices, electrical components, Hall effect devices, etc., can solve problems such as performance and power consumption, and achieve increased storage density, reduced power consumption, and reduced The effect of performance degradation

Active Publication Date: 2020-09-18
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

However, adding an external magnetic field is not conducive to making high-density and large-capacity memory, and performance and power consumption will also be affected

Method used

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  • Spin orbit moment-based memory cell and manufacturing method thereof
  • Spin orbit moment-based memory cell and manufacturing method thereof
  • Spin orbit moment-based memory cell and manufacturing method thereof

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Embodiment Construction

[0051]In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0052] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques ar...

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Abstract

The invention provides a spin orbital moment-based memory cell and a manufacturing method thereof. The spin orbital moment-based memory cell includes a magnetic tunnel junction including a free layer,a barrier layer and a reference layer stacked in sequence; a horizontal spin orbital moment effect layer in contact with the bottom surface of the free layer; and a vertical spin orbital moment effect layer, and a vertical spin orbital moment effect layer which covers one side wall of the free layer. According to the spin orbital moment-based memory cell, deterministic overturning of the magnetization direction of the free layer can be achieved under the condition that an external magnetic field is not needed.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a spin-orbit moment-based storage unit and a manufacturing method thereof. Background technique [0002] SOT-MRAM (Spin-Orbit Torque-Magnetic Random Access Memory, spin-orbit moment magnetic memory) is a new type of memory with nanosecond reading and writing speed, low power consumption, almost unlimited service life, non-volatile properties, and has great application potential. [0003] In the current mainstream SOT-MRAM cell structure, the magnetic tunnel junction adopts interface perpendicular anisotropy. Under normal conditions, if there is no external magnetic field, the spin-orbit moment can only deflect the magnetization direction of the free layer of the magnetic tunnel junction from perpendicular to the interface. To the interface level, after the current is removed, the spin-orbit moment disappears, and the free layer of the magnetic tunnel junction will not pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/14H01L27/22H10N52/00H10N52/01
CPCH10B61/00H10N52/00H10N52/01
Inventor 迟克群孟皓
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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