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Memory cell based on spin-orbit moment and its manufacturing method

A spin-orbit, memory cell technology, applied in the manufacture/processing of electromagnetic devices, electrical components, semiconductor devices, etc., can solve the problems of performance and power consumption, and achieve improved storage density, reduced performance degradation, and reduced power consumption. Effect

Active Publication Date: 2022-06-24
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, adding an external magnetic field is not conducive to making high-density and large-capacity memory, and performance and power consumption will also be affected

Method used

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  • Memory cell based on spin-orbit moment and its manufacturing method
  • Memory cell based on spin-orbit moment and its manufacturing method
  • Memory cell based on spin-orbit moment and its manufacturing method

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Embodiment Construction

[0051]In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0052] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of...

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Abstract

The invention provides a storage unit based on spin-orbit moment and a manufacturing method thereof. The storage unit based on the spin-orbit moment includes: a magnetic tunnel junction, the magnetic tunnel junction includes a free layer, a barrier layer and a reference layer stacked in sequence; a horizontal spin-orbit moment effect layer, the horizontal spin-orbit moment The effect layer is in contact with the bottom surface of the free layer; the vertical spin-orbit moment effect layer, and the vertical spin-orbit moment effect layer covers a side wall of the free layer. The storage unit based on the spin-orbit moment provided by the present invention can realize deterministic reversal of the magnetization direction of the free layer without an external magnetic field.

Description

technical field [0001] The present invention relates to the technical field of magnetic memory, and in particular, to a spin-orbit moment-based storage unit and a manufacturing method thereof. Background technique [0002] SOT-MRAM (Spin-Orbit Torque-Magnetic Random Access Memory, spin-orbit torque magnetic memory) is a new type of memory with nanosecond read and write rate, low power consumption, nearly infinite service life, non-volatile It has great potential for application. [0003] In the current mainstream SOT-MRAM cell structure, the magnetic tunnel junction adopts the interface perpendicular anisotropy. Under normal conditions, if there is no external magnetic field, the spin-orbit moment can only make the magnetization direction of the free layer of the magnetic tunnel junction deflect from perpendicular to the interface. To the interface level, after the current is removed, the spin-orbit moment disappears, and the free layer of the magnetic tunnel junction will ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/14H01L27/22H10N52/00H10N52/01
CPCH10B61/00H10N52/00H10N52/01
Inventor 迟克群孟皓
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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