Test unit for improving WAT test precision and test method thereof

Abstract

The invention provides a test unit for improving WAT test precision and a test method thereof, and the test unit for improving WAT test precision comprises an MOS transistor region which comprises N MOS transistors with the same feature size; the metal region is positioned above the MOS transistor region; and the interconnection metal wire is used for connecting the MOS transistors with the metal region, so that the N MOS transistors are connected in parallel. Under the condition that existing testing hardware is not changed, the problem that precision is insufficient when a testing machine and a needle card test the leakage current of the MOS transistor can be effectively solved, so that the leakage current of the MOS transistor can be accurately and efficiently tested; the testing process is convenient and simple, the testing cost can be reduced, and application and popularization of the method are facilitated; according to the invention, a small-size MOS transistor is tested, so that the performance of the MOS transistor can be known, and a solution is provided in subsequent chip design, so that chip integration is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor device preparation technology, in particular to a test unit and a test method for improving WAT test accuracy. Background technique [0002] Semiconductor technology In the design of integrated circuits or the development of process technology platforms, it is usually necessary to use a variety of leakage test structures to reflect whether the circuit design and process capabilities of semiconductor devices are normal. Different leakage test structures can reflect different device characteristics. The characteristics improve circuit design or process in semiconductor devices. Transistors are commonly used devices in semiconductor integrated chips. At present, for low-power integrated chips, the leakage current of transistors has become a crucial parameter, and the transistor leakage current directly affects the static power consumption of low-power integrated chips. As the integration level of the i...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a kind of test unit and test method thereof that improves WAT test accuracy, for while satisfying and can use existing test hardware condition, avoid prior art Insufficient test accuracy of the middle machine or needle card

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