Check patentability & draft patents in minutes with Patsnap Eureka AI!

WAT automatic re-measurement method

A technology of automatic re-test and re-test, applied in the direction of automatic test system, measurement power, measurement device, etc., can solve the problems of large labor cost, reduce test efficiency, missed pick and so on, achieve the effect of accurate test data and improve test efficiency

Pending Publication Date: 2022-05-24
SEMITRONIX
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method will cost a lot of labor costs, and there will be missed retest items, which greatly reduces the test efficiency. It is necessary to provide a convenient and fast retest method to achieve high-efficiency wafer testing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • WAT automatic re-measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The technical solutions in the specific embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0035] like figure 1 Shown is a flow chart of a WAT ​​automatic remeasurement method in an embodiment provided by the present invention. It should be noted that, in order to describe the technical solution more specifically, the steps described in this embodiment are not strictly and inventive. The steps described in the content section correspond one-to-one.

[0036] The present embodiment provides a WAT ​​automatic re-measurement method, which specifically includes the following steps:

[0037] Step 1. The t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a WAT automatic retest method, and belongs to the technical field of integrated circuit testing. The method specifically comprises the following steps: step 1, a test device selects retest setting and configuration information, wherein the configuration information comprises a data configuration file related to a test; selecting and loading a wafer to be tested; 2, the test equipment executes the main test process to obtain an initial test result; step 3, the test equipment automatically executes a retest analysis system according to the retest setting, and analyzes the initial test result to obtain a retest item list; 4, if the retest item list is empty, not executing the retest process, and continuing to execute the main test process; otherwise, the test equipment executes a retest process; and re-testing the content of the re-testing item list, and continuing to execute the main testing process after re-testing. According to the invention, automatic retest of test items with unstable test results in the wafer electrical property test process can be realized, and the test efficiency and the test precision are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit testing, and in particular relates to a WAT ​​automatic retesting method. Background technique [0002] The integrated circuit manufacturing process is complex and lengthy. From a single semiconductor wafer to a finished wafer, it often needs to go through dozens or even hundreds of processes. During the entire manufacturing process, any process step deviation or environmental changes will affect the final product performance of the integrated circuit chip. and finished products. Therefore, the electrical test of the wafer runs through the entire integrated circuit production process and is an important part of chip manufacturing. It is irreplaceable to control the product yield, reliability and production process by extracting and analyzing the effective information of the test data. and very effective means. Wafer electrical testing plays a very important role in yield monitoring an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
CPCG01R31/2834G01R31/2851G01R31/2831Y02P90/30
Inventor 毛俊李成霞
Owner SEMITRONIX
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More