Ultra-wideband radio frequency amplifier covering fundamental frequency

A radio frequency amplifier, high frequency amplifier technology, applied in the direction of high frequency amplifier, amplifier, amplifier combination, etc., can solve the problem of poor flatness index, the amplifier cannot cover more than 2 octaves, the amplifier is difficult to cover more than 2 octaves And other issues

Active Publication Date: 2022-05-27
CHENGDU GANIDE TECH
View PDF21 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many circuit structures of common traditional radio frequency and microwave ultra-wideband radio frequency amplifier chips. The existing amplifiers have some design deficiencies, which are mainly reflected in: (1) Based on the traditional RLC negative feedback technology, it mainly relies on the capacitance resistance and inductance negative feedback structure. Suppress low-frequency gain and improve high-frequency output matching to achieve the effect of expa

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-wideband radio frequency amplifier covering fundamental frequency
  • Ultra-wideband radio frequency amplifier covering fundamental frequency
  • Ultra-wideband radio frequency amplifier covering fundamental frequency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The embodiments of the present invention will be further described below with reference to the accompanying drawings.

[0028] like figure 1 As shown, the present invention provides an ultra-wideband radio frequency amplifier covering the fundamental frequency, including an input triplex bias network, an intermediate frequency amplifier, a baseband amplifier, a high frequency amplifier and an output triplex bias network;

[0029] The input end of the input triplex bias network is used as the input end of the ultra-wideband radio frequency amplifier, the first output end of which is connected with the first input end of the intermediate frequency amplifier, the second output end thereof is connected with the input end of the base frequency amplifier, and the third output end thereof is connected with the input end of the base frequency amplifier. The output end is connected with the first input end of the high frequency amplifier;

[0030] The output end of the output t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ultra wide band radio frequency amplifier covering fundamental frequency. The ultra wide band radio frequency amplifier comprises an input triplex bias network, an intermediate frequency amplifier, a fundamental frequency amplifier, a high frequency amplifier and an output triplex bias network. Based on the self-biased cascode amplification technology, the RLC negative feedback technology and the same-direction traveling wave high-frequency amplification technology are combined, a three-component synthesis structure is utilized, the ultra-wideband power amplification function covering a fundamental frequency band to a millimeter wave frequency band can be achieved, the gain index and gain flatness are high, and power consumption is low.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an ultra-wideband radio frequency amplifier covering a fundamental frequency. Background technique [0002] With the rapid development of ultra-wideband communication and test instrument equipment, RF front-end receivers are also developing in the direction of ultra-wideband, high integration and low power consumption. Therefore, the market urgently needs RF and microwave amplifier chips with ultra-wideband, low power consumption, and high flatness, especially the design of amplifier chips that need to cover 4 octaves and include the fundamental frequency is more challenging. There are many circuit structures of common traditional RF and microwave ultra-wideband RF amplifier chips. The existing amplifiers have some design deficiencies, which are mainly reflected in: (1) Based on traditional RLC negative feedback technology, it mainly relies on capacitor re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F1/42H03F1/56H03F1/26H03F3/19H03F3/68
CPCH03F1/42H03F1/565H03F1/26H03F3/19H03F3/68Y02D30/70
Inventor 王测天邬海峰童伟刘莹廖学介滑育楠胡柳林张谦
Owner CHENGDU GANIDE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap