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Light emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of affecting the luminous brightness of light-emitting diodes, low mobility, and reduced surface flatness, so as to ensure surface flatness and luminescence efficiency effect

Active Publication Date: 2022-06-17
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the solubility of Mg in GaN is limited. High-concentration Mg doping will lead to a decrease in the crystal quality of the p-type GaN layer (that is, the hole supply layer), which will

Method used

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  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof

Examples

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[0033]实施例一

[0034]请参阅图1-图2，所示为本发明实施例一中的发光二极管外延片，包括衬底1、以及依次外延生长于衬底1上的缓冲层2、不掺杂的GaN层3、N型掺杂GaN层4、多量子阱层5、电子阻挡层6、空穴提供层7和欧姆接触层8。

[0035]在本实施例当中，空穴提供层7为复合型空穴提供层，具体地，空穴提供层7包括依次外延生长的第一子层71和第二子层72，第一子层71为AlN层和BN层交替层叠的周期性结构，AlN和BN组成的超晶格结构，对从底层延伸上来的位错有阻断作用，可以作为位错阻断层；其次，AlN和BN层叠周期性生长可以形成二维空穴气，二维空穴气增加了空穴迁移率，从而增加电子和空穴的复合效率，且此层的晶体质量很好，有利于空穴的扩展，提升发光二极管的发光效率。此外AlN的能阶较高，可以起到部分电子阻挡层的作用，阻挡电子隧穿到P层。第二子层72为第一P型InGaN层、生长停顿层和第二P型InGaN层交替层叠的周期性结构。生长高掺P型InGaN层，In和N作为杂质能级引入，可以起到降低Mg的活化能的作用，可以有效的提升空穴浓度。然而，高浓度Mg掺杂本身会使外延片表面恶化，粗糙度增加，再加上In原子很大，In原子的加入会使的高P型掺杂InGaN层晶体质量很差，所以在高掺P后面生长生长停顿层，对高掺P型InGaN层进行生长停顿处理，可以防止In的扩散，增加高掺P型InGaN界面清晰度，增加了表面平整度；在生长停顿层后生长低掺P型GaN层，一方面作为盖层，覆盖高掺P型InGaN层产生的缺陷，同时这种高低P型掺杂的设计，有利于空穴的扩展，空穴迁移率的提升。

[0036]在本实施例一些较佳实施情况当中，第一P型InGaN层为高掺Mg的P型InGaN层，第二P型InGaN层为低掺Mg的P型InGaN层，具体地，第一P型InGaN层的Mg掺杂浓度可以为1×1021 cm-3，第二P型InGaN层的Mg掺杂浓度可以为第一P型InGaN层的Mg掺杂浓度的10%。生长停顿层的生长时间为30s，第一P型InGaN层的生长温度为800℃，第二P型InGaN层的生长温度为900℃，生长停顿层的生长温度自第一P型InGaN层的生长温度向第二P型InGaN层的生长温度渐变升高，即从800℃渐变升高至900℃。此外，AlN层中的Al组分含量为0.1，BN层中的B组分含量为0.1，第一P型I...

Example Embodiment

[0058]实施例二

[0059]本发明实施例二也提出一种发光二极管外延片及其制备方法，本实施例当中的发光二极管外延片及其制备方法与实施例一当中的发光二极管外延片及其制备方法的不同之处在于：

[0060]第一P型InGaN层的Mg掺杂浓度为1× 1020cm-3，第二P型InGaN层的Mg掺杂浓度为第一P型InGaN层的Mg掺杂浓度的20%，生长停顿层的生长时间为20s。

Example Embodiment

[0061]实施例三

[0062]本发明实施例三也提出一种发光二极管外延片及其制备方法，本实施例当中的发光二极管外延片及其制备方法与实施例一当中的发光二极管外延片及其制备方法的不同之处在于：

[0063]第一P型InGaN层的Mg掺杂浓度为1× 1020cm-3，第二P型InGaN层的Mg掺杂浓度为第一P型InGaN层的Mg掺杂浓度的30%，生长停顿层的生长时间为10s。

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Abstract

The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, the light-emitting diode epitaxial wafer comprises a hole providing layer, the hole providing layer comprises a first sub-layer and a second sub-layer which are sequentially epitaxially grown, the first sub-layer is of a periodic structure formed by alternately stacking AlN layers and BN layers, and the second sub-layer is of a periodic structure formed by alternately stacking AlN layers and BN layers. The second sub-layer is of a periodic structure formed by alternately stacking a first P-type InGaN layer, a growth pause layer and a second P-type InGaN layer; wherein the Mg doping concentration of the first P-type InGaN layer is greater than that of the second P-type InGaN layer. The composite hole providing layer provided by the invention can solve the problems that the surface flatness is reduced, the hole mobility is low and the luminous efficiency of a light-emitting diode is low due to the fact that the crystal quality is reduced due to high-concentration Mg doping.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. Due to its small size, high brightness, and low energy consumption, it is widely used in various fields. Among them, GaN-based LED is a common type of LED, which has been widely used in the field of solid-state lighting and display, attracting more and more people's attention. [0003] One of the difficulties facing the growth of GaN materials is the improvement of hole concentration and hole mobility. Since the activation rate of Mg is very low, the hole concentration is not enough. In order to achieve a high hole concentration, a high concentration of Mg doping is required. However, the solubility of Mg in GaN is limited. High-concentration Mg doping w...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/02H01L33/00
CPCH01L33/025H01L33/14H01L33/007
Inventor 张彩霞程金连印从飞胡加辉金从龙
Owner JIANGXI ZHAO CHI SEMICON CO LTD