Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal film stress testing method based on terahertz waves

A metal film and stress measurement technology, which is applied in the direction of measuring the change force of the optical properties of the material when it is stressed, can solve the problems of destroying the metal film operation, low measurement efficiency, and complexity, and achieves low test operation requirements. Realize the effect of dynamic observation and detection, and realize the effect of non-destructive and non-contact real-time rapid detection

Pending Publication Date: 2022-07-15
TIANJIN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no special equipment for the non-contact stress test of the metal film. The existing test equipment will destroy the metal film to a certain extent and the operation is complicated, and the measurement efficiency is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal film stress testing method based on terahertz waves

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The technical solutions of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention, used to illustrate the concept of the present invention; these descriptions are all explanatory and exemplary, and should not be construed as limiting the embodiments of the present invention and the protection scope of the present invention . In addition to the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the contents disclosed in the claims and the description of the present application, and these technical solutions include adopting any modifications made to the embodiments described herein. Obvious alternative and modified technical solutions. It should be understood that, unless otherwise specified, for ease of understanding, the following descriptions of the specific ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A metal film stress testing method based on terahertz waves is characterized by comprising the following steps that a terahertz light source and testing environment conditions are adjusted and set according to film base sample estimation parameters; transmitting terahertz waves to a film-free area and a film area on the surface of the film-based sample respectively; accurately measuring the terahertz wave band refractive index of the substrate material according to the transmitted wave of the film-free area and the primary echo signal; measuring the direct current conductivity of the metal film according to the transmitted wave of the film area and the transmitted wave of the film-free area, and repeating the measurement process to obtain multiple groups of direct current conductivity of the metal film in different stress states; and calculating the stress value of the metal film sample according to the obtained stress-conductivity relation curve and the direct current conductivity change of the metal film before and after stress.

Description

technical field [0001] The invention belongs to the technical field of measuring the mechanical properties of metal thin films by using terahertz, and in particular relates to a method for measuring the stress of metal thin films based on terahertz waves. Background technique [0002] Metal films cannot exist independently, and usually need to be deposited on various rigid or flexible substrates. Due to the different thermal expansion coefficients of metal films and substrates, there will be residual stress inside the deposited metal films. In addition, when the flexible film-based structure is subjected to bending, stretching When the external load is applied, various external stresses will be generated inside the metal film. Residual stress and applied stress can affect the DC conductivity of metal films, which largely determines the properties of metal films. However, there is no special equipment for the non-contact stress testing of metal thin films. The existing testi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/24
CPCG01L1/24
Inventor 王志勇马伟皓杨思源王世斌李林安
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com