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Three-dimensional memory, manufacturing method thereof and memory system

A memory, three-dimensional technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., to reduce the number of programming times, improve operating efficiency, and reduce programming interference

Pending Publication Date: 2022-07-22
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for memories including multiple sub-stack structures, Program Disturb is more serious

Method used

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  • Three-dimensional memory, manufacturing method thereof and memory system
  • Three-dimensional memory, manufacturing method thereof and memory system
  • Three-dimensional memory, manufacturing method thereof and memory system

Examples

Experimental program
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Embodiment Construction

[0045] The technical solutions of the present disclosure will be further elaborated below with reference to the accompanying drawings and specific embodiments of the description.

[0046] In the embodiments of the present disclosure, the terms "first", "second", etc. are used to distinguish similar objects, and are not used to describe a specific order or sequence.

[0047] In the embodiment of the present disclosure, the term "A and B are in contact" includes the situation that A and B are in direct contact, or the situation that other components are interposed between A and B, and A is indirectly in contact with B.

[0048] In embodiments of the present disclosure, the term "layer" refers to a portion of a material that includes a region having a thickness. A layer may extend over the entirety of the underlying or overlying structure, or may have an extent that is less than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of a homoge...

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PUM

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Abstract

The embodiment of the invention discloses a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory comprises a substrate; the at least two storage arrays are stacked in the direction perpendicular to the substrate; each storage array comprises a stacking structure, the stacking structure comprises a top selection gate, and the top selection gate is located on the side, relatively away from the substrate, of the stacking structure; a plurality of channel columns penetrating through the stacked structure; a top select gate cut that partitions the top select gate; wherein in the direction parallel to the substrate, the top selection gate cut lines are located between the two adjacent channel columns; wherein the channel columns which are arranged in the at least two storage arrays in a mutually stacked manner are electrically connected.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a three-dimensional memory, a method for fabricating the same, and a memory system. Background technique [0002] With the rapid development of 5G and the Internet, the Internet of Everything has become a future trend, and the society's demand for large storage capacity is increasing. 3D NAND memory has become a mainstream memory device due to its high integration of memory cells. [0003] The 3D NAND memory includes an array area and a peripheral circuit area, and the array area includes a core area having memory cells. As the number of layers of the stacked structure in the array area increases, the number of storage layers increases, and it becomes more and more difficult to form a deep hole through the stacked structure (the deep hole is subsequently used to form memory cells). A plurality of sub-stack structures with a small number of lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11548H01L27/11556H01L27/1157H01L27/11575H01L27/11582H10B41/35H10B41/27H10B41/50H10B43/27H10B43/35H10B43/50
CPCH10B41/35H10B41/50H10B41/27H10B43/35H10B43/50H10B43/27
Inventor 王均保
Owner YANGTZE MEMORY TECH CO LTD