Quantum dot light emitting diode, preparation method thereof and display device

Abstract

The invention provides a quantum dot light emitting diode, a preparation method thereof and a display device, and the method comprises the steps: (1) providing a substrate, and preparing a first electrode on the surface of the substrate; (2) preparing a light-emitting functional layer on the surface, far away from the substrate, of the first electrode; (3) preparing a second electrode on the surface, far away from the first electrode, of the light-emitting functional layer; (4) annealing the substrate obtained in the step (3), wherein the annealing temperature at least reaches the recrystallization temperature of the second electrode; and (5) packaging to obtain the quantum dot light emitting diode. Therefore, the quantum dot light-emitting diode prepared by the method has the advantages of good contact between the cathode and the adjacent functional layer, small black spot area and long service life.

Description

technical field [0001] The present application relates to the field of display, and in particular, to a quantum dot light-emitting diode, a method for preparing the same, and a display device. Background technique [0002] At present, the cathode materials of QLEDs often choose high-purity metals with low work function, such as Ag, Al, etc., and form films by vacuum evaporation. Since the metal cathode is formed in a vacuum environment, when the metal cathode is transferred to a normal atmospheric pressure environment after the evaporation is completed, the change of the air pressure will cause the internal stress of the metal film. In addition, since the thermally evaporated gaseous source material mainly adheres to the substrate in one direction, if the roughness of the substrate is relatively large, the deposited film will be very non-uniform, because some more prominent areas on the substrate will hinder the evaporation The object moves to certain areas, thereby forming...

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Problems solved by technology

In addition, since the thermally evaporated gaseous source material adheres to the substrate mainly in one direction, if the roughness of the substrate is relatively large, the deposited film will be very uneven, because some protruding areas on the substrate will hinder the evaporation. The material moves to certain areas, thus forming a "ladder-like coverage", and the uneven thickness of the film produces stress

The existence of internal stress can easily cause the metal cathode to separate from the adjacent functional layer, resulting in black spots and greatly reducing the life of the device

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