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Substrate processing apparatus

A substrate and reactor technology, applied in coating, gaseous chemical plating, discharge tube, etc., can solve problems such as deterioration of compatibility, processing failure, etc.

Pending Publication Date: 2022-07-29
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This asymmetric film thickness may lead to processing failure in subsequent processes, or worsen compatibility with subsequent processes

Method used

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  • Substrate processing apparatus
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Embodiment Construction

[0036] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Use an expression such as "at least one" before a list of elements to modify the entire list of elements, rather than modifying individual elements in the list.

[0037] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0038] In this regard, the present embodiments may have different forms and should not be construed as...

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Abstract

Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate having an asymmetric exhaust structure, wherein the distance between a gas flow control ring (FCR) and an exhaust unit on the side where an exhaust port is located is greater than the distance between the FCR and the exhaust unit on the opposite side of the exhaust port.

Description

technical field [0001] One or more embodiments of the present disclosure relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an asymmetric exhaust structure in order to improve the symmetry of the profile of a thin film deposited on a substrate. Background technique [0002] like figure 1 As shown, in the substrate processing apparatus 1 equipped with a plurality of reactors 2, the exhaust port 3 of each reactor 2 is located on the outer wall of the reactor 2 (at figure 1 In the case of the side wall), and can be formed to penetrate the outer wall of the substrate processing apparatus 1. As an example, the exhaust port 3 on the reactor 2 may be configured to penetrate vertically through the corner surface where the two outer walls 4 and 5 of the substrate processing apparatus 1 meet. The one or more exhaust ports 3 of the plurality of reactors 2 may be connected to each other by common exhaust lines 6 and 7 on the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455H01L21/67
CPCC23C16/4412C23C16/45544H01L21/67017H01J37/32449H01J37/32834C23C16/4585C23C16/401C23C16/45502C23C16/45589H01J2237/332C23C16/4583
Inventor T.W.金J.H.柳Y.W.郑Y.S.金金英民
Owner エーエスエムアイピーホールディングベーフェー