Static discharge protecting element and realated circuit

Abstract

The invention discloses an ESD and relevent ESD prevention circuit. In the invented ESD prevention element, the redundant grid structure, replaces STT layer that the ESD current must bypass through in well known LVTSCR. Thus in one hand, the redundant grid structure can provide insulation effect in adulteration area, in other hand, it does not block the discharging path when ESD event occurs so as to raise the turning on speed of LVTSCR and tolerance.

Description

technical field [0001] The invention relates to a low-voltage triggering semiconductor control rectifier (Low-voltageTriggering semiconductor control rectifier, LVTSCR) and related circuits, in particular to an LVTSCR and a circuit suitable for a shallow trench isolation (shallow trench isolation, STI) manufacturing process . technical background [0002] With the advancement of manufacturing process technology, electrostatic discharge (ESD) has become one of the main considerations for the reliability of integrated circuits (ICs). Especially after semiconductor manufacturing technology enters the deep submicron regime, scaled-down transistors and thinner gate oxide layers are relatively vulnerable to ESD stress. Therefore, an ESD protection circuit must be provided at the input and output terminals of the IC to protect the components in the IC from being damaged by ESD. [0003] refer to figure 1 , figure 1 It is a cross-sectional view of a traditional LVTSCR. figure 1...

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Problems solved by technology

and figure 1 Comparing the ESD current path in the, figure 2 The current path in is significantly longer, so, relatively, figure 2 LVTSCR manufactured by China-Israel STI manufacturing process will be difficult to quickly discharge ESD current

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