52results about How to "Fast conduction speed" patented technology

The device includes several batteries to be monitored, single chip unit, an A/D convertor and some switch units. The output signal of the single chip unit controls on/off of corresponding switch unit in cycle, and controls on/off of single battery circuit further. Data of output voltage of corresponding single battery collected by the A/D convertor are sent to the single chip unit. Advantages of the invention are: simple measuring and monitoring method, reliable measured data and low requirement of withstand voltage for signal processing and digital conversion circuit board.

The invention provides an SCR electrostatic protection device and an electrostatic protection circuit. The SCR electrostatic protection device formed in a continuous active region of a top semiconductor layer on an insulating layer includes two N wells encircling a P doping region of an SCR and two P wells encircling an N doping region of the SCR to form a finger type diode structure, so that a parasitic PNP transistor and a parasitic NPN transistor of the SCR are formed; an additional N doping region adjacent to one N well and an additional P doping region adjacent to one P well are added between each two adjacent N well and P well and thus a parasitic gate controlled diode or PN junction diode is generated between the N well and the P well, so that the base electrode of the parasitic PNPtriode is connected to the base electrode of the parasitic NPN triode by the parasitic gate controlled diode or PN junction diode. According to the SCR electrostatic protection device and the electrostatic protection circuit, the low SCR trigger voltage and high maintaining voltage are provided and electrostatic protection is provided for the integrated circuit formed by processes like an SOI.

The invention provides a fast recovery diode, which comprises a p-type semiconductor layer and an n-type semiconductor layer which is contacted with the p-type semiconductor layer, wherein in the transverse direction, the service life of a minority carrier in the p-type semiconductor layer is gradually prolonged and the doped concentration is gradually reduced from an outer surface of the p-type side to a metallurgical junction, and the service life of the minority carrier in the n-type semiconductor layer is gradually shortened and the doped concentration is gradually increased from the metallurgical junction to an outer surface of the n-type side. The fast recovery diode has higher forward recovery characteristics by controlling the doped concentration and the service life of the minority carrier. The invention also provides another fast recovery diode, which has higher reverse recovery characteristics by controlling the doped concentration and the service life of the minority carrier in the p-type semiconductor layer and the n-type semiconductor layer. The invention also provides another fast recovery diode, which has higher forward recovery characteristics and reverse recoverycharacteristics by controlling the doped concentration and the service life of the minority carrier in the p-type semiconductor layer and the n-type semiconductor layer.

According to the gate voltage bootstrap sampling switch circuit adopting the mirror image structure, the bootstrap capacitance is increased to two times of that of a traditional circuit by adopting the mirror image structure, and the linearity of a sampling switch is improved; channel charge injection is inhibited by adopting a technology of absorbing channel charges generated by related MOS tubesby a clock-controlled virtual MOS tube; and a structure that the output end of a clock-controlled inverter drives an NMOS tube M10 and an NMOS tube M12 is adopted. The parasitic capacitance of the grid node of the sampling switch tube M11 is reduced; circuit charge sharing is suppressed, and, at the sampling start phase, the NMOS tube M10 and the NMOS tube M12 are respectively conducted with thePMOS tube MOS tube M5 and the PMOS tube M13 at the same time, and the conducted speed of the sampling switch is speeded up; and at the moment from sampling to holding conversion, a circuit composed ofthe PMOS tube M8 and the NMOS tube M9 and a circuit composed of the PMOS tube M16 and the NMOS tube M17 are kept on for a period of time at the same time, and the turn-off speed of the sampling switch is increased. According to the circuit, the linearity and the switching speed of the gate voltage bootstrap sampling switch circuit are effectively improved, so that the overall performance of the gate voltage bootstrap sampling switch circuit is effectively improved.

A grid voltage generating circuit is used to provide a grid voltage to a transistor switch, and comprises a first voltage generating circuit and a second voltage generating circuit. The first voltage generating circuit is used to provide a first voltage to a grid of the transistor switch, and the second voltage generating circuit is used to provide a second voltage to the grid of the transistor switch, wherein the second voltage is at least greater than a voltage needed to conduct the transistor switch, and the first voltage is greater than the second voltage.

The invention discloses a protective element and an electrostatic discharging protection device having the same. The electrostatic discharging protection device comprises a protective element and an element controller. The protective element comprises first and second P-type well regions which are configured in a N-type deep well region, a first N-type transistor which is formed in the N-type deep well region and a first P-type well region, and a second N-type transistor which is formed in the N-type deep well region and a second P-type well region. When an electrostatic pulse occurs in a first welding pad or a second welding pad, the element controller is used to conduct one of the first-type transistor and the second N-type transistor to release the electrostatic pulse. When first and second operating signals are supplied to the first and second welding pads, the element controller is used to close the first and second N-type transistors according to the first and second operating signals to make a current path cannot be formed by the protective element.

The invention relates to a direct current power circuit based on inductive storage and having no electrolytic capacitor, comprising a switching signal source, a switching circuit, an inductive storage device, a filter circuit, a power-frequency power input end, a direct current power output end and a system operating source which are electrically connected. The switching circuit comprises a multistage directly-coupled triode push-pull switching circuit and an insulated gate field-effect-transistor, a capacitor of the filter circuit is not an electrolytic capacitor, and the capacity of a single capacitor is not greater than 10 microfarads. The multistage directly-coupled triode push-pull switching circuit is provided with a regenerative feedback circuit, and a speed-up capacitor is connected to the regenerative feedback circuit in series. The wave form of a switching signal has great squareness factor, steep leading edge and sharp front angle, and the operating efficiency of a power tube is high. The direct current power circuit based on inductive storage and having no electrolytic capacitor has high efficiency, low energy consumption, less maintenance and long fault-free operating time and can meet the use requirements of important engineering fields.

The invention belongs to the technical field of pulse power switches, and provides an along-surface flashover vacuum trigger switch with a gear-shaped trigger electrode structure. The trigger switch comprises a ceramic insulating shell, a shielding case, an anode electrode, a cathode electrode, a gear-shaped along-surface flashover material and an annular embedded trigger electrode. The external annular embedded trigger electrode can effectively prevent the trigger electrode from being ablated by a main gap arc, is used in cooperation with the gear-shaped along-surface flashover material, caninhibit contraction of an along-surface flashover channel through a magnetic field generated by axial current, and achieves the purpose of prolonging the service life of the switch. The external gear-shaped embedded trigger electrode structure adopted by the invention can effectively solve the problems that the existing along-surface flashover vacuum switch is short in service life and not resistant to ablation.

The invention discloses an asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode. An asymmetric silicon controlled rectifier structure is selected, a path of a protection ring is used as a temporary discharge path for negative pulses, and a problem that a traditional device has a parasitic path of the protection ring can be solved; and the protection grade of the device can be controlled by increasing or decreasing the number of cathodes in a novel interdigital mode. If the device protection grade is high, the number of cathodes is increased; and if the device protection grade is low, the number of cathodes is reduced, and the layout area is saved. The P + of the inner side interdigital is floated, so that the parasitic NPN base resistance of the inner side interdigital is increased; meanwhile, the outer side interdigital is helped be started, so that the conduction speed of the device is increased, and the current distribution ismore uniform; and finally, the maintaining voltage of the whole device is generally determined by the innermost interdigital, so that the problem that the maintaining voltage of the device in the traditional interdigital mode is reduced along with the increase of the interdigital index is solved.

The invention discloses a low-temperature drift time-delay circuit. The circuit comprises a bias current source circuit, a slope voltage generation circuit and a fixed threshold switching circuit. Thebias current source circuit is used for generating negative temperature coefficient current bias, the input end of the bias current source circuit is connected with power voltage, and the output endof the bias current source circuit is connected with the ramp voltage generation circuit. The bias input end of the ramp voltage generating circuit is connected with the output end of the bias currentsource circuit, the digital signal input end of the ramp voltage generating circuit is connected with digital signal input, and the output end of the ramp voltage generating circuit is connected withthe fixed threshold switching circuit. The pull-down switch input end of the fixed threshold switch circuit is connected with the output end of the ramp voltage generation circuit, the pull-up switchinput end of the fixed threshold switch circuit is connected with digital signal input, and the output end of the fixed threshold switch circuit outputs delayed digital signals. According to the invention, delay processing can be carried out on a digital signal without being influenced by temperature and power supply voltage. The fixed threshold switch circuit adopts a thyristor structure as a pull-down switch, and has the advantages of stable threshold, high speed, simple structure and the like.

The invention discloses a ground automatic no-power section passing device for a zoning station and a control method. The device comprises a control unit, and a detection unit and two thyristor valveblock units which are connected with the control unit; the two thyristor valve block units are respectively arranged between a neutral region and supply arms of substations on the two sides; each thyristor valve block unit comprises two thyristor valves which are connected in an anti-parallel manner; each thyristor valve is connected with the control unit. When a train passes through a no-power section, the detection unit detects a network voltage signal and current signals of the two thyristor valve block units and sends the signals to the control unit, and the control unit generates controlsignals respectively and sends the control signals to each thyristor valve to control ON and OFF; the method is a control method of the device. The device and the method are simple in control implementation, high in control precision, safety and reliability, short in power-off time for no-power section passing, and capable of avoiding tidal current circulation between power supplies on the two sides of zoning stations.

The invention relates to a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate which comprises diode regions arranged along a first direction; a first fin structure which is located on the diode region and comprises a plurality of first sacrificial layers and first channel layers, wherein the first sacrificial layers are overlapped in the normal direction of the surface of the substrate, and each first channel layer is located between every two adjacent first sacrificial layers; and a first gate structure which is located on the first fin structure, wherein the first gate structure stretches across the first fin structure. The first sacrificial layer is reserved in the first fin structure, so that the current of the finally formed gate-controlled diode structure can be conducted from the first sacrificial layer and the first channel layer at the same time, the conducted current of the gate-controlled diode is increased, the conduction speed is correspondingly increased, and the performance of the finally formed semiconductor structure is improved.

The invention discloses an ESD and relevent ESD prevention circuit. In the invented ESD prevention element, the redundant grid structure, replaces STT layer that the ESD current must bypass through in well known LVTSCR. Thus in one hand, the redundant grid structure can provide insulation effect in adulteration area, in other hand, it does not block the discharging path when ESD event occurs so as to raise the turning on speed of LVTSCR and tolerance.

The invention relates to a digital control constant current source device with the threshold voltage preprocessing function. As a preprocessing measure for high-power N-channel-field-effect-transistor threshold voltage is added, the initial grid voltage of a power field-effect transistor is suitably improved; as the technical scheme is adopted, and compared with the prior art, the digital control constant current source device with the threshold voltage preprocessing function has the advantages that the conducting speed of the power field-effect transistor is increased, the driving efficiency of a power-field-effect-transistor driving circuit is improved, the dynamic response performance of a power digital control constant current source is improved, and the digital control constant current source device has the quite-large practical advantage; in addition, the digital control constant current source device can also flexibly adjust the initial grid voltage loaded to the power field-effect transistor according to the use condition to be suitable for the application requirements of various different power field-effect transistors; common electron components are adopted for achievement, the components are easy to purchase, and the digital control constant current source device has good application prospects.

The invention discloses a three-phase switch which comprises three inlet ends. Three inlet ends are converged to form an outlet end. Each inlet end is connected in series with a thyristor. Three alternating current contactors are connected in parallel with the respective thyristor. Each thyristor and alternating current contactor are connected with a control unit. The switch can automatically switch among three phases without power off, which is safe and convenient.

The invention provides a method for forming a contact hole with a high aspect ratio, which comprises the following steps that a substrate is provided, a dielectric layer is formed on the substrate, the dielectric layer comprises a non-easy over-etching region and an easy over-etching region, the dielectric layer comprises at least two sub-dielectric layers, an auxiliary layer is arranged between the sub-dielectric layers and located in the easy over-etching region, the sub-dielectric layer is located in a non-easy over-etching region, and the etching rate of the etching substance to the auxiliary layer is smaller than the etching rate of the etching substance to the dielectric layer; a patterned mask layer is formed on the dielectric layer, the mask layer is provided with a pattern window, and the pattern window exposes the dielectric layer; and the dielectric layer and the auxiliary layer are etched by taking the mask layer as a barrier layer to form the contact hole with the high aspect ratio. The method has the advantages that the auxiliary layer is added in the easy over-etching region of the dielectric layer, so that the resistance of the region to plasma bombardment is enhanced, the region cannot be over-etched by plasma, the subsequent filling of a conductive material cannot be influenced, and the performance of the device is greatly improved.

The invention relates to a driving circuit implementation device for improving dynamic performance of a power tube. The driving circuit implementation device comprises an input signal source, a phaseinverter, a first integrated circuit, a second integrated circuit, fourteen resistors, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first transistor, a second transistor, a third transistor, a first power supply, a second power supply, a third power supply (external power supply), first reference ground and second reference ground. By increasing the conduction speed of an N-channel enhanced MOSFET tube, the effects of reducing the switch loss, increasing the conduction speed and improving the dynamic response performance are achieved. The power tube driving circuit implemented by the invention is mainly applied to the field of a linear power supply, a switch power supply or an electronic load requiring a power field-effect transistor asan energy consumption component, the response speed and the dynamic loading response performance of the power tube can be effectively changed, and thus, the driving circuit has a wide application prospect.

The invention discloses a zinc oxide lightning arrester with a controllable part adopting a small-diameter valve plate. The lightning arrester comprises a fixed part and the controllable part, and is characterized in that one end of the controllable part is connected with a gas gap unit, the other end of the controllable part is connected with one end of the fixed part, the fixed part and the controllable part respectively comprise at least one layer of lightning arrester valve plate, the multiple layers of lightning arrester valve plates are connected in series, and the diameter of the lightning arrester valve plate of the fixed part is larger than that of the lightning arrester valve plate of the controllable part. The lightning arrester is simple in structure, the charge rate can be reduced, the service life of the lightning arrester is prolonged, and the aim of enhancing the lightning overvoltage limiting capacity is achieved when lightning voltage comes.