Asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode and manufacturing method thereof

It is an electrostatic discharge and asymmetric technology, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as irreconcilability, failure to turn off, and influence on the operation of the core circuit.

Active Publication Date: 2020-10-20
XIANGTAN UNIV
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The asymmetric bidirectional SCR device is turned on and maintains a very low voltage due to strong conduction. When the circuit is working normally, it may be unable to be turned off due to static electri...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode and manufacturing method thereof
  • Asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode and manufacturing method thereof
  • Asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0055] Such as image 3 As shown, an interdigitated asymmetric triac electrostatic discharge device includes a P-type substrate 101; a P-type epitaxial layer 301 is arranged above the P-type substrate 101, and the P-type substrate 101 and the P-type An N-type buried layer 201 is provided between the epitaxial layers 301;

[0056] The P-type epitaxial layer 301 is provided with a first high voltage N well 401, a second high voltage N well 402 and a third high voltage N well 403 sequentially from left to right;

[0057] A first deep N well 501 is provided in the first high voltage N well 401, a second deep N well 502 is provided in the second high voltage N well 402, and the left side of the second deep N well 502 is wider than the second high voltage N well 402 , the third deep N well 503 is provided in the third high voltage N well 403 and the left si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an asymmetric bidirectional silicon controlled rectifier electrostatic discharge device in an interdigital mode. An asymmetric silicon controlled rectifier structure is selected, a path of a protection ring is used as a temporary discharge path for negative pulses, and a problem that a traditional device has a parasitic path of the protection ring can be solved; and the protection grade of the device can be controlled by increasing or decreasing the number of cathodes in a novel interdigital mode. If the device protection grade is high, the number of cathodes is increased; and if the device protection grade is low, the number of cathodes is reduced, and the layout area is saved. The P + of the inner side interdigital is floated, so that the parasitic NPN base resistance of the inner side interdigital is increased; meanwhile, the outer side interdigital is helped be started, so that the conduction speed of the device is increased, and the current distribution ismore uniform; and finally, the maintaining voltage of the whole device is generally determined by the innermost interdigital, so that the problem that the maintaining voltage of the device in the traditional interdigital mode is reduced along with the increase of the interdigital index is solved.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to an interdigitated asymmetric bidirectional thyristor electrostatic discharge device and a manufacturing method thereof. Background technique [0002] With the advancement of semiconductor manufacturing technology, the feature size of the device is continuously reduced and the degree of integration is continuously improved. The design window of SD devices is getting smaller and smaller, and the difficulty is getting more and more difficult. It is necessary to occupy a small chip area and have a good static discharge ability. ESD protection devices have become one of the main problems faced by product engineers. [0003] Silicon Controlled Rectifier (SCR) is a conventional device structure for on-chip ESD protection. Compared with diodes, triodes, and field effect transistors, it has the advantages of high discharge efficiency per unit area, strong robustness, and high prot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/02H01L29/06H01L21/8228
CPCH01L27/0262H01L27/0296H01L29/0623H01L21/8228
Inventor 汪洋李婕妤魏伟鹏曹佩曹文苗
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap