Low-temperature drift time-delay circuit

Abstract

The invention discloses a low-temperature drift time-delay circuit. The circuit comprises a bias current source circuit, a slope voltage generation circuit and a fixed threshold switching circuit. Thebias current source circuit is used for generating negative temperature coefficient current bias, the input end of the bias current source circuit is connected with power voltage, and the output endof the bias current source circuit is connected with the ramp voltage generation circuit. The bias input end of the ramp voltage generating circuit is connected with the output end of the bias currentsource circuit, the digital signal input end of the ramp voltage generating circuit is connected with digital signal input, and the output end of the ramp voltage generating circuit is connected withthe fixed threshold switching circuit. The pull-down switch input end of the fixed threshold switch circuit is connected with the output end of the ramp voltage generation circuit, the pull-up switchinput end of the fixed threshold switch circuit is connected with digital signal input, and the output end of the fixed threshold switch circuit outputs delayed digital signals. According to the invention, delay processing can be carried out on a digital signal without being influenced by temperature and power supply voltage. The fixed threshold switch circuit adopts a thyristor structure as a pull-down switch, and has the advantages of stable threshold, high speed, simple structure and the like.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and in particular relates to a low-temperature drift delay circuit. Background technique [0002] As all kinds of electrical appliances have higher and higher requirements for switching power supply chips, the design of switching power supply chip has higher and higher requirements for the oscillator inside the chip. The impact of the operating frequency of a switching power supply chip on chip performance involves parameters such as ripple, loop stability, and maximum load, and even indirectly affects the chip's input voltage range and small signal response speed. Due to the different thermal power generated by the chip under different loads and the temperature change of the environment, the chip works at different temperatures, and the different temperature characteristics of the devices under different processes make the output frequency of the oscillator also affected by te...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects and improvement needs of the prior art, the present invention provides a low-temperature drift delay circuit, the purpose of which is to solve the problem that the single-stage delay of the on-chip integrated oscillator is affected when the temperature and power supply voltage change

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