34results about How to "Small conduction current" patented technology

The invention provides a separation method and a corresponding transferring method comprising separating a detached member from a substrate, wherein the separation of the detached member from the substrate consists of continuous beam irradiation; a first beam irradiation irradiating a first area, a second beam irradiation irradiating a second area, the two areas overlapped with each other. The invention also provides a manufacture method for thin film device with application of the separation method and the transferring method.

A transfer method comprising: providing a substrate; forming a transferred layer on the substrate; combining a transfer body with the transferred layer; and removing the transferred layer from the substrate, and transferring the transferred layer to the Transfer body; re-use the above substrate for another transfer.

The invention discloses a low-temperature drift delay circuit. The circuit includes: a bias current source circuit, a slope voltage generating circuit and a fixed threshold switch circuit; the bias current source circuit is used to generate a negative temperature coefficient current bias, Its input terminal is connected to the power supply voltage, and its output terminal is connected to the slope voltage generating circuit; the bias input terminal of the slope voltage generating circuit is connected to the output terminal of the bias current source circuit, and its digital signal input terminal is connected to the digital signal input , the output terminal of which is connected to the fixed threshold switch circuit; the input terminal of the pull-down switch of the fixed threshold switch circuit is connected to the output terminal of the slope voltage generating circuit, the input terminal of the pull-up switch is connected to the digital signal input, and the output terminal of the fixed threshold switch circuit is delayed subsequent digital signals. The invention can perform time-delay processing on digital signals without being affected by temperature and power supply voltage; the fixed threshold switch circuit adopts a thyristor structure as a pull-down switch, and has the advantages of stable threshold value, high speed, simple structure and the like.

The invention discloses an injection-locked frequency divider with dual-mode low power consumption and wide locking range, comprising a negative resistance unit, an injection unit, a resonant unit and a switched capacitor array unit, the negative resistance unit, an injection unit, a resonant unit and a switch The capacitor array units are connected in parallel with each other. In the present invention, by setting the negative resistance unit adopting the current multiplexing structure and substrate bias technology, the power supply voltage is reduced and the conduction current is reduced by half, and the performance of low power consumption is realized; by designing the switched capacitor array unit, the The switching signal controls the capacitance value of the capacitor array to achieve a wide range, which avoids the compromise design of power consumption and quality factor due to the locked range in circuit parameters, and does not increase power consumption significantly. The dual-mode frequency division is realized by setting the injection unit of the double-tube direct injection method, and the influence of the injection power on the wide range is reduced through the specific bias design of the injection tube, and the wide lock-in is maintained at a low injection power. range advantage.

The invention relates to a VDMOS, comprising: a semiconductor substrate, a body region formed in the substrate, and a source region formed in the body region; a trench runs through the source region and the body region and extends to the substrate, and each trench gate structure includes The gate dielectric layer on the inner wall of the trench and the gate layer filled in the trench; the first interlayer dielectric layer, the first metal layer, and the second interlayer dielectric layer are sequentially stacked on the source region and each trench gate structure. A dielectric layer and a second metal layer; one of the first metal layer and the second metal layer is a gate metal layer and is connected to each gate layer through a gate contact hole, and the other layer is used as a source metal layer and is connected to each gate layer through a gate contact hole. The source region contact hole is connected to the body region, and the number of trench gate structures located on the same side of the source region contact hole in each cell structure is N≥2. The number of trench gate structures on the same side as the contact hole in the source region of the cellular structure is N≥2, which can obtain a larger conduction current while occupying a small area of ​​the trench gate.

The invention discloses a reading method and a flash memory device. The reading method is applied to the flash memory device comprising a nonvolatile semiconductor memory unit array. The method comprises the steps of judging whether to read all memory units of the nonvolatile semiconductor memory unit array, if yes, applying voltage to corresponding word lines of all memory units to perform a first sensing operation; and after the first sensing operation, performing a second sensing operation on the memory unit determined to be in a closed state, wherein a difference between the voltage applied to the word lines during the first sensing operation and the voltage applied to the work lines during the second sensing operation is within a preset range, and sensing time corresponding to the second sensing operation is not less than that corresponding to the first sensing operation. According to the technical scheme of the method and the device provided by the invention, the flash memory device can be read via the two sensing operations, and thus noise of a common source line is reduced, and accuracy of the reading operation is ensured.

The invention discloses a multi-mode output driven type presser foot lifting electromagnet control system. The system comprises a driving circuit, a control circuit and a work circuit, wherein the driving circuit comprises a power unit, a first diode and a capacitor unit; the control circuit comprises a micro processor and a resistor unit; the work circuit comprises a switch unit, an electromagnetand a second diode; the micro processor controls the power unit to output linear adjustable direct-current voltage, and the voltage can be adjusted to 0 V; the micro processor controls the switch unit to be switched on or off. By means of the multi-mode output driven type presser foot lifting electromagnet control system, the problem is solved that when continuously working, the electromagnet istoo hot and damaged, and the problems are solved that in the process that the lifting state of a presser foot is changed into a lowering state of the presser foot, the mechanical shock between the presser foot and the contact surface is large, so that the device is short in service life and a fabric is damaged, and it is achieved that the electromagnet is quickly started.