Trench type vertical double diffused metal oxide semiconductor field effect transistor

Abstract

The invention relates to a VDMOS, comprising: a semiconductor substrate, a body region formed in the substrate, and a source region formed in the body region; a trench runs through the source region and the body region and extends to the substrate, and each trench gate structure includes The gate dielectric layer on the inner wall of the trench and the gate layer filled in the trench; the first interlayer dielectric layer, the first metal layer, and the second interlayer dielectric layer are sequentially stacked on the source region and each trench gate structure. A dielectric layer and a second metal layer; one of the first metal layer and the second metal layer is a gate metal layer and is connected to each gate layer through a gate contact hole, and the other layer is used as a source metal layer and is connected to each gate layer through a gate contact hole. The source region contact hole is connected to the body region, and the number of trench gate structures located on the same side of the source region contact hole in each cell structure is N≥2. The number of trench gate structures on the same side as the contact hole in the source region of the cellular structure is N≥2, which can obtain a larger conduction current while occupying a small area of ​​the trench gate.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a trench type vertical double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] The gate region of a Vertical Double Diffusion Metal Oxide Semiconductor Field Effect Transistor (VDMOS for short) penetrates the body region to form a trench gate structure, and the VDMOS with the trench gate structure is a trench type VDMOS. Trench VDMOS can eliminate parasitic junction field effect transistors, so it has a smaller on-resistance than ordinary VDMOS. Trench-type VDMOS usually contains multiple parallel cell structures, and the cell structure is defined as the smallest semiconductor structure repeating unit that constitutes VDMOS. The trench gate structure in the cell structure is generally a single trench gate structure formed on the outer edge of the cell structure to form a closed figure. For example, the trench gate structure can be formed int...

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Problems solved by technology

[0003] Based on this, it is necessary to propose a new trench-type VDMOS for the technical problem that the conduction current of the trench-type VDMOS is limited.

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