Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a gate structure which is located on a substrate and is parallel to the surface of the substrate and is perpendicular to the extending direction of the gate structure as the transverse direction; the drain electrode is positioned on one side of the gate structure; the first drift region and the drain electrode are located on the same side of the gate structure, and the projection of the first drift region in the substrate covers the projection of the drain electrode in the substrate; the second drift region is located at the end, close to the drain electrode, of the gate structure, the first drift region and the second drift region are spaced in the transverse direction, and the ion doping concentration of the second drift region is higher than that of the first drift region. In the embodiment of the invention, the projection of the first drift region in the substrate covers the projection of the drain electrode in the substrate, so that the drain electrode voltage drop borne by the first drift region is relatively high, and the breakdown voltage of the LDMOS is relatively high; and the ion doping concentration of the second drift region is higher than that of the first drift region, so that the on-resistance of the first drift region is relatively small, and the on-current of the LDMOS is relatively large.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing in the direction of higher component density, higher integration and higher performance. A power semiconductor device (Power Electronic Device) is a high-power electronic device mainly used in power conversion and control circuits of power equipment (usually refers to a current of tens to thousands of amperes and a voltage of hundreds of volts or more). [0003] Among them, LDMOS (Laterally Diffused Metal Oxide Semiconductor, Laterally Diffused Metal Oxide Semiconductor) is a power device with a double diffusion structure, which is often used in radio frequency power circuits. control requirements, etc. Lateral Double Diffusion Field Effect Transi...

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Problems solved by technology

[0004] However, it is difficult to increase the breakdown voltage (Breakdown Voltage) and conduction current of LDMOS devices at the same time

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