Driving circuit implementation device for improving dynamic performance of power tube

Abstract

The invention relates to a driving circuit implementation device for improving dynamic performance of a power tube. The driving circuit implementation device comprises an input signal source, a phaseinverter, a first integrated circuit, a second integrated circuit, fourteen resistors, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first transistor, a second transistor, a third transistor, a first power supply, a second power supply, a third power supply (external power supply), first reference ground and second reference ground. By increasing the conduction speed of an N-channel enhanced MOSFET tube, the effects of reducing the switch loss, increasing the conduction speed and improving the dynamic response performance are achieved. The power tube driving circuit implemented by the invention is mainly applied to the field of a linear power supply, a switch power supply or an electronic load requiring a power field-effect transistor asan energy consumption component, the response speed and the dynamic loading response performance of the power tube can be effectively changed, and thus, the driving circuit has a wide application prospect.

Description

technical field [0001] The invention relates to the fields of electronic circuits and electronic measurement, in particular to a driving circuit realization device for improving the dynamic performance of a power tube, which is mainly used in linear power supply, switching power supply or electronic load and other occasions. . Background technique [0002] The N-channel enhanced MOSFET drive circuit is mainly used in fields such as linear power supplies, switching power supplies or electronic loads that require power field effect transistors as energy-consuming components. [0003] The traditional N-channel enhancement MOSFET drive circuit lacks measures to deal with the MOSFET cut-off voltage. According to the characteristics of the field effect transistor, the I d =f(V gs -V th ) Only when the gate voltage is higher than the cut-off voltage, the MOSFET starts to work, realizing the function of voltage control current. Therefore, the traditional driving circuit is only ...

AI Technical Summary

Problems solved by technology

However, this invention does not properly handle the cut-off voltage, which leads to a relatively slow turn-on speed of the power tube, and although the dynamic performance has been improved to a certain extent, it is still relatively poor

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