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Light emitting diode and its preparation method

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as unsatisfactory luminous intensity, and achieve the effects of low voltage, optimal luminous intensity, and simple manufacturing process

Inactive Publication Date: 2004-09-15
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under the operating current of 20mA, the luminous intensity of this MS AlGaInP LED is only about 90mcd, which is still at least 40% less than that of the TS AlGaInP LED, so its luminous intensity is not satisfactory.

Method used

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  • Light emitting diode and its preparation method
  • Light emitting diode and its preparation method
  • Light emitting diode and its preparation method

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Embodiment Construction

[0024] The invention discloses a light emitting diode structure and a manufacturing method thereof. In order to make the description of the present invention more detailed and complete, refer to the following description and cooperate Figure 1 to Figure 3 icon.

[0025] first please refer to figure 1 The epitaxial structure of the light-emitting diode of the present invention includes an N-type gallium arsenide (GaAs) substrate 26, an etching stop layer (Etching StopLayer) 24, and an N-type aluminum gallium indium phosphide (AlxGa1-x) stacked in sequence. 0.5 In 0.5 The lower cladding (Cladding) layer 22 of P and aluminum gallium indium phosphide (AlxGa1-x) 0.5 In 0.5 P active layer (Active Layer) 20, P-type aluminum gallium indium phosphide (AlxGa1-x) 0.5 In 0.5 An upper cladding layer 18 of P and a P-type ohmic contact epitaxial layer (Ohmic Contact Epitaxial Layer) 16 . Next, a P-type ohmic contact metal electrode layer 28 is formed on the P-type ohmic contact epit...

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Abstract

The transparent ahdesion layer of not absorbing light is utilized to adhere the polycrystal chip of the light emitting diode (LED), which possesses the absorption substrate (AS) and the transparent substrate (TS). Then, the AS is removed so as to form the LED with the TS. since the transparent substrate does not absorb light, the luminous efficiency of the LED is increased greatly. Meanwhile, the channel connects the ohmic cnotacts and the nail line electrode layer, thus the voltage can be lowered under fixed current and the current distribution can be raised in order to lift the luminescence efficiency of the LED.

Description

technical field [0001] The present invention relates to a light emitting diode (Light Emitting Diode; LED) chip structure and a manufacturing method thereof, in particular to a structure of an aluminum gallium indium phosphide (AlGaInP) light emitting diode and a manufacturing method thereof. Background technique [0002] The traditional aluminum gallium indium phosphide light-emitting diode has a double heterostructure (DoubleHeterostructure; DH), its structure is as follows Image 6 As shown, an n-type (AlxGa1-x) with an aluminum content of 70%-100% is grown on an n-type gallium arsenide (GaAs) substrate (Substrate) 3 0.5 In 0.5 The lower cladding layer of P 4, one (AlxGa1-x) 0.5 In 0.5 P active layer 5, a p-type (AlxGa1-x) with an aluminum content of 70%-100% 0.5 In 0.5 The upper cladding layer 6 of P, and a p-type high energy gap current spreading layer (CurrentSpreading Layer) 7, the material of this layer can be gallium phosphide, gallium arsenide phosphide, galliu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/48
Inventor 林锦源杨光能
Owner EPISTAR CORP