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Semiconductor device with capacitor and its producing method

A technology of semiconductor and capacitor structure, applied in the field of semiconductor devices, can solve the problems of repetitive manufacturing, difficulty in producing memory cells with reliability, etc.

Inactive Publication Date: 2004-10-27
HYUNDAI ELECTRONICS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] These issues thus lead to difficulties in achieving the required repeatability, reliability, and yield of manufactured memory cells

Method used

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  • Semiconductor device with capacitor and its producing method
  • Semiconductor device with capacitor and its producing method
  • Semiconductor device with capacitor and its producing method

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Experimental program
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Embodiment Construction

[0016] figure 1 A cross-sectional view of a semiconductor device 100 of the present invention is provided, including an active matrix 110, a capacitor structure 150, a second insulating layer 126, a bit line 134, a metal interconnect 136, and a layer made of tetraethylorthosilicate (TEOS) SiO 2 138 and Ti metal layer 140 provide a double hydrogen barrier layer 142.

[0017] In addition, the passivation layer 144 is formed on the bit line 134, and the Ti metal layer 140 and the second insulating layer 126 are completed by plasma-enhanced chemical vapor deposition (PECVD) technology at a high temperature in a hydrogen-rich environment, for example, 320-400 ℃. In the semiconductor device 100, the bit line 134 is electrically connected to one of the diffusion regions 106, and the upper electrode of the capacitor structure 150 is electrically connected to the other diffusion region 106 through the metal interconnection 136, and the bit line 134 and the metal interconnection 136 a...

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PUM

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Abstract

A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure formed on top of the first insulating layer, composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film; a second insulating layer formed on top of the transistor and the capacitor structure; a metal interconnection formed on top of the second insulating layer and the active matrix to electrically connect the transistor to the capacitor structure; and a hydrogen barrier layer formed on top of the metal interconnection.

Description

technical field [0001] The present invention relates to a semiconductor device; more specifically, to a semiconductor device with a capacitor structure used in a memory unit and a manufacturing method thereof. Background technique [0002] As is well known, a dynamic random access memory (DRAM) including memory cells of transistors and capacitors has a high degree of integration mainly through miniaturization to reduce the size. However, this still requires reducing the area of ​​the memory cell. [0003] Therefore, in order to meet this need, several methods have been proposed, such as a trench type structure or stacked type capacitors, which are three-dimensionally arranged for capacitors in memory devices for the purpose of reducing the memory cell area. However, manufacturing a three-dimensional array of capacitors is a long and time-consuming process and generally requires high manufacturing costs. Therefore, there is an urgent need for a new memory device that can re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/316H10B12/00H10B20/00H10B69/00
CPCH01L27/11507H01L27/10855H01L21/02263H01L27/11502H01L21/31604H01L21/31612H01L21/02164H01L28/55H10B12/0335H10B53/30H10B53/00H01L27/105
Inventor 梁飞龙洪锡敬李承锡姜南守
Owner HYUNDAI ELECTRONICS IND CO LTD