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Semiconductor luminescent device

A light-emitting device and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of electron leakage, reduction of luminous efficiency of short-wave semiconductor light-emitting devices, and decrease of luminous efficiency

Inactive Publication Date: 2005-04-27
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] from Figure 12 It can be clearly seen that in semiconductor light-emitting devices with a light-emitting wavelength equal to or less than 590nm, the leakage of electrons becomes particularly important, so the luminous efficiency decreases and the brightness decreases.
Due to the above reasons, the luminous efficiency decreases in short-wave semiconductor light-emitting devices, making it difficult to obtain high-brightness semiconductor light-emitting devices.

Method used

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  • Semiconductor luminescent device
  • Semiconductor luminescent device
  • Semiconductor luminescent device

Examples

Experimental program
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Effect test

no. 1 example

[0125] The following will refer to Figure 1A and 1B A light emitting diode as the semiconductor light emitting device of the first embodiment of the present invention will be described.

[0126] Such as Figure 1A As shown, the light emitting diode is provided with: an n-type (Al x Ga 1-x ) 0.51 In 0.49 P (0.7≤x≤1) lower cladding layer 12, as an example of the active layer (Al x Ga 1-x ) 0.51 In 0.49 P(0≤x≤1) has an active layer 13 and an exemplary p-type (Al x Ga 1-x ) 0.51 In 0.49 P (0.7≤x≤1) overcladding layer 15, these layers are sequentially formed on an n-type GaAs substrate 11 as an example of a compound semiconductor substrate. Then, a p-type GaP layer 14 as an example of a semiconductor layer is interposed between the active layer 13 and the upper cladding layer 15 .

[0127] The active layer 13 emits light having a wavelength not greater than 590 nm. The highest energy position of the lower end of the conduction band of the p-type GaP layer 14 is 0.02...

no. 2 example

[0139] The following will refer to Figure 2A and 2B A light emitting diode is described as a semiconductor light emitting device according to a second embodiment of the present invention.

[0140] Such as Figure 2A As shown, the light emitting diode is provided with: an n-type (Al x Ga 1-x ) 0.51 In 0.49 P(0.7≤x≤1) lower cladding layer 22, an example of an active layer (Al x Ga 1-x ) 0.51 In 0.49 P (0≤x≤1) active layer 23, a p-type (Al x Ga 1-x ) 0.51 In 0.49 P (0.7≤x≤1) first upper cladding layer 24 and a p-type (Al x Ga 1-x ) 0.51 In 0.49 P(0.7≤x≤1) second upper cladding layer 26, these layers are sequentially formed on an n-type GaAs substrate 21 as an example of a compound semiconductor substrate. Then, a p-type GaP layer 25 as an example of a semiconductor layer is interposed between the first upper cladding layer 24 and the second upper cladding layer 26 .

[0141] The active layer 23 emits light having a wavelength not greater than 590 nm. The highe...

no. 3 example

[0153] The following will refer to Figure 3A and 3B A light emitting diode is described as a semiconductor light emitting device according to a third embodiment of the present invention.

[0154] Such as Figure 3A As shown, the light emitting diode is provided with: an n-type (Al x Ga 1-x ) 0.51 In 0.49 P(0.7≤x≤1) lower cladding layer 32, an example of an active layer (Al x Ga 1-x ) 0.51 In 0.49 P (0≤x≤1) active layer 33, a p-type (Al x Ga 1-x ) 0.51 In 0.49 P (0.7≤x≤1) overcladding layer 35, these layers are sequentially formed on an n-type GaAs substrate 31 as an example of a compound semiconductor substrate. Then, as an example of a semiconductor layer, a p-type Al x Ga 1-x The P(0<x≦0.7) layer 34 is placed between the active layer 33 and the upper cladding layer 35 .

[0155]The active layer 33 emits light having a wavelength not greater than 590 nm. In the p-type Al x Ga 1-x The highest energy position of the lower end of the conduction band of the P(...

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Abstract

A semiconductor light-emitting device has a lower clad layer, an active layer, a p-type GaP layer and an upper clad layer, which are successively formed on an n-type GaAs substrate. The p-type GaP layer has a higher energy position by 0.10 eV than the upper clad layer in the conduction band, which makes it more difficult to let electrons escape from the active layer. This contributes to increase of the probability of radiative recombination between electrons and holes in the active layer, and thereby, luminance of the semiconductor light-emitting device is improved. The p-type GaP layer is effective in a semiconductor light-emitting device having a short wavelength in particular.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device, in particular, to a semiconductor light-emitting device whose light-emitting part adopts AlGaInP-based semiconductor. Background technique [0002] In order to form a high-brightness semiconductor light-emitting device, it is necessary to increase the luminous efficiency of its active layer, increase the amount of current injected into the active layer, and increase the efficiency of taking light emitted from the active layer out of the device. [0003] In order to increase the amount of current injected into the light emitting portion, it is effective to use a current diffusion layer, an intermediate layer, and the like that can increase the amount of injected current without increasing the operating voltage. At the same time, there is a need to increase the number of electrons and holes that contribute to luminescent recombination by limiting the injected current (electrons and h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/30
CPCH01L33/06H01L33/30
Inventor 中村淳一佐佐木和明
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD